Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and testing system for determining chemical mechanical polishing break point of phase-change material

A chemical-mechanical and phase-change material technology, used in grinding machine tools, grinding devices, metal processing equipment, etc., to reduce surface defects and improve device yield

Active Publication Date: 2013-06-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is unscientific to simply rely on time to set the polishing end point, and a new method is needed to control the polishing stop point

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and testing system for determining chemical mechanical polishing break point of phase-change material
  • Method and testing system for determining chemical mechanical polishing break point of phase-change material
  • Method and testing system for determining chemical mechanical polishing break point of phase-change material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 1 to Figure 6 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method and a testing system for determining a chemical mechanical polishing break point of a phase-change material. According to the method, based on intensity of reflected light from the structure surface of the material which is polished chemically and mechanically, the chemical mechanical polishing break point is determined, so that the phase-change material outside a nanopore or a nanometer groove can be effectively removed, damages to a surface layer can be reduced and the yield of a device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device preparation, in particular to a method for determining the stop point of chemical mechanical polishing of phase change materials. Background technique [0002] With the rapid development of electronic technology and computer technology, the demand for ultra-large capacity non-volatile memory is becoming more and more urgent. Due to its advantages of high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration and radiation resistance, and compatibility with existing standard CMOS processes, phase change memory has been adopted The Semiconductor Industry Association believes that it is most likely to replace the current flash memory and become the mainstream product of the next generation of memory. [0003] In many phase change material systems, chalcogenides, such as: Ge x Sb y Te （1-x-y） , Si x Sb y Te （1-x-y） , Ti x Sb y Te ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B37/013
Inventor 何敖东宋志棠刘波刘卫丽吴关平王良咏李俊焘俞磊闫未霞
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI