superjunction device

Abstract

The invention discloses a terminal protection structure of a super junction component. A middle area of the super junction component is a current flowing area which comprises a plurality of current flowing area grooves, and the current flowing area grooves are formed in parallel. The terminal protection structure of the super junction component surrounds the periphery of the current flowing area in a square mode, and comprises a plurality of short grooves. The short grooves are separated from the current flowing area grooves. Short grooves which are located above and below the current flowing area grooves are parallel to the current flowing area grooves. Short grooves which are located on the left side and the right side of the current flowing area grooves are perpendicular to the current flowing area grooves. The terminal protection structure of the super junction component can greatly improve a use ratio of areas of silicon slices.

Description

technical field [0001] The present application relates to semiconductor technology, in particular to a super junction device. Background technique [0002] The super junction MOSFET adopts a new voltage-resistant layer structure, and uses a series of alternately arranged P-type semiconductor thin layers and N-type semiconductor thin layers to combine the P-type semiconductor thin layers and N-type semiconductor thin layers at a lower voltage in the off state. The thin semiconductor layer is depleted to achieve mutual charge compensation, so that the thin P-type semiconductor layer and the thin N-type semiconductor layer can achieve high breakdown voltage under high doping concentration, thereby obtaining low on-resistance and high breakdown at the same time voltage, breaking the theoretical limit of traditional power MOSFETs. Like the existing DMOS devices, a super junction MOSFET is formed by repeated arrangements of many units; due to the consistency of each unit, there i...

AI Technical Summary

Problems solved by technology

[0004] The terminal protection structure of the super junction device disclosed in Chinese patent application 201010141072.X is realized by digging deep grooves and then filling the deep grooves with doped silicon of the opposite type to the substrate, and adopts a parallel ring structure trench ring 23 to form the outermost protection zone of the current flow region, since the potential of each trench ring 23 will be in a floating state, so when the super junction device works in reverse bias, the potential on each trench ring 23 is due to the The position is different from the current flow region, resulting in inconsistent reverse bias voltages applied to the PN junctions on each trench ring 23, resulting in inconsistent depletion effects of the PN junctions of each trench ring 23, and the PN depletion efficiency is not obtained. Fully utilized, as a result, it is necessary to increase the area of ​​the terminal protection structure area to obtain a sufficient voltage division effect, which reduces the actual use efficiency of the product die area

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