Preparation method for halogen mixed with cadmium telluride, thin film solar cell of halogen mixed with cadmium telluride and preparation method thereof

A solar cell and cadmium telluride technology, which is applied in the manufacture of circuits, electrical components, and final products, can solve the problems of difficult control of halogen doping concentration, hazards to operators and the environment, and poor uniformity of cadmium halide, so as to reduce the operating process and experimental equipment, reduce production costs, and fully respond to the effect

Active Publication Date: 2013-06-19
广东先导稀贵金属材料有限公司
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Problems solved by technology

[0007] In view of the problems existing in the prior art, an object of the present invention is to provide a method for preparing halogen-doped cadmium telluride, which solves the problems of high requirements for raw materials and / or equipment, complicated process and high cost in the existing preparation methods. , It is difficult to control the technical problems such as halogen doping concentration
[0008] Another object of the present invention is to provide a method for preparing thin-film solar cells, which solves the problems of poor uniformity of cadmium halide, complex process, high production cost, low safety, and harm to operators and the environment in existing preparation methods. technical problem

Method used

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  • Preparation method for halogen mixed with cadmium telluride, thin film solar cell of halogen mixed with cadmium telluride and preparation method thereof
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  • Preparation method for halogen mixed with cadmium telluride, thin film solar cell of halogen mixed with cadmium telluride and preparation method thereof

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preparation example Construction

[0026] The first aspect - the preparation method of halogen-doped cadmium telluride

[0027] First, the preparation method of halogen-doped cadmium telluride according to the present invention is explained.

[0028] Such as figure 1 As shown, the preparation method of halogen-doped cadmium telluride according to the present invention includes the steps of: weighing 5N cadmium and 5N tellurium into a reactor according to a first prescribed mass ratio to obtain a cadmium-tellurium mixture (step S1), wherein , the first prescribed mass ratio is the mass ratio between the 5N cadmium and the 5N tellurium; adding 4N or more cadmium halides to the reactor according to the second prescribed mass ratio (step S2), the The second prescribed mass ratio is the mass ratio between the cadmium halide and the cadmium tellurium mixture; vacuumize the reactor to a prescribed vacuum degree and seal it (step S3); put the sealed reactor into In a heater, a temperature rise treatment is performed ...

Embodiment 1

[0038] (1) First, 500 g of 5N cadmium and 5N tellurium are weighed in a mass ratio of 1:1 and loaded into a reactor to obtain a cadmium-tellurium mixture;

[0039] (2) according to the mass ratio of cadmium chloride and cadmium tellurium mixture, be 15mg / kg to add 4N cadmium chloride in above-mentioned reactor;

[0040] (3) vacuumize the reactor after the above-mentioned charging to make its vacuum degree reach 10 -2 Pa and sealed;

[0041] (4) The heating process is as follows: when the heater heats up to 200°C, put the sealed reactor into it, keep it warm for 10 minutes, then raise the temperature to 700°C at a heating rate of 13°C / min, keep it warm for 15 minutes, and then heat it at a heating rate of 3°C / min. min to raise the temperature to 1150°C and hold for 10 minutes;

[0042] (5) The cooling process is as follows: the reactor is taken out from the above-mentioned heater at a speed of 1 mm / h, and cooled at room temperature;

[0043] (6) Take out the sample from the ...

Embodiment 2

[0045] (1) First, 450 g of 5N cadmium and 5N tellurium are weighed in a mass ratio of 1: 1.13 and loaded into a reactor to obtain a cadmium-tellurium mixture;

[0046] (2) according to the mass ratio of cadmium chloride and cadmium tellurium mixture, be 50mg / kg to add 5N cadmium chloride in above-mentioned reactor;

[0047] (3) vacuumize the reactor after the above-mentioned charging to make its vacuum degree reach 10 -2 Pa and sealed;

[0048] (4) The heating process is as follows: when the heater heats up to 200°C, put the sealed reactor into it, keep it warm for 30 minutes, then raise the temperature to 800°C at a heating rate of 13°C / min, keep it for 30 minutes, and then heat it at a heating rate of 5°C / min. min to raise the temperature to 1200°C and hold for 10 minutes;

[0049] (5) The cooling process is as follows: the charging reactor is directly taken out from the heater as a whole, and cooled at room temperature;

[0050] (6) The sample is taken out from the react...

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Abstract

The invention relates to a preparation method for halogen mixed with cadmium telluride, a thin film solar cell of halogen mixed with cadmium telluride and a preparation method of the thin film solar cell of halogen mixed with cadmium telluride. The preparation method for halogen mixed with cadmium telluride includes that 5 N cadmium and 5 N tellurium are weighted and placed in a reactor according to a first required mass ratio so as to obtain a mixture of cadmium and tellurium, and the first required mass ratio is a mass ratio between the 5 N cadmium and the 5 N tellurium. 4 N or more halogenated cadmium is added in the reactor according to a second required mass ratio, and the second required mass ratio is a mass ratio between the halogenated cadmium and the mixture of cadmium and tellurium. The reactor is vacuumized to a required vacuum degree and is sealed. The sealed reactor is placed in a heater, and warming treatment is carried out on the reactor. Cooling treatment is carried out on the sealed reactor which undergoes the warming treatment. The halogen mixed with cadmium telluride obtained through the preparation method for halogen mixed with cadmium telluride is adopted by the thin film solar cell of halogen mixed with cadmium telluride and the preparation method of the thin film solar cell of halogen mixed with cadmium telluride.

Description

technical field [0001] The invention relates to the preparation of cadmium telluride (CdTe) and thin-film solar cell, in particular to a preparation method of halogen-doped cadmium telluride, a halogen-doped cadmium telluride thin-film solar cell and the preparation method thereof. Background technique [0002] CdTe, a group II-VI semiconductor material, has a bandgap of 1.46eV, is a direct transition type, and matches well with the solar spectrum. It is a good absorber material for constructing photovoltaic cells, and it is also a variety of photosensitive devices and visible display systems with excellent performance. s material. CdTe is used in LEDs, photonics materials, biomarkers, spectroscopic analysis, CO 2 Q modulation of lasers, infrared modulators, Hg x Cd 1-x Te substrate, infrared window electroluminescent device, infrared detection, X-ray detection, nuclear radiation detector, light-emitting device close to the visible light region, etc. [0003] Because CdT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0296
CPCY02P70/50
Inventor 王国凤吴勇陞朱刘文崇斌
Owner 广东先导稀贵金属材料有限公司
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