Magnetron sputtering apparatus and process

Abstract

The invention provides a magnetron sputtering apparatus and process. The magnetron sputtering apparatus comprises a loading / unloading chamber, a reaction chamber and a transmission chamber, wherein the loading / unloading chamber is used for loading and unloading a processed workpiece; an electrostatic chuck for supporting the processed workpiece is arranged in the reaction chamber; a mechanical arm for transmitting the processed workpiece between the loading / unloading chamber and the reaction chamber is arranged in the transmission chamber; an obstruction tray for obstructing the surface of the electrostatic chuck is arranged outside the reaction chamber; when the surface of the electrostatic chuck needs to be obstructed, the obstruction tray is transmitted to a position above the electrostatic chuck through the mechanical arm; and when the surface of the electrostatic chuck does not need to be obstructed, the obstruction tray is transmitted from the position above the electrostatic chuck to the outside of the reaction chamber through the mechanical arm. Thus, the invention reduces the volume of the reaction chamber, simplifies the structure of the magnetron sputtering apparatus and lowers the manufacturing cost of the magnetron sputtering apparatus.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a magnetron sputtering device and a process method thereof. Background technique [0002] Magnetron sputtering is to excite the plasma in a high-vacuum reaction chamber, and then use the positive ions in the plasma to bombard the target to sputter out the target atoms and deposit the target atoms on the silicon wafer and other processed workpieces. superior. In practical applications, due to the high purity of the target, it is easy to form a layer of oxide on its surface, which will have a negative impact on the deposition process of magnetron sputtering. Therefore, it is necessary to remove the oxide on the surface of the target before performing the deposition process. [0003] The sputtering method is currently a common method for removing oxides on the target surface. During the process of removing oxides, the removed oxides are likely to fall on the su...

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Problems solved by technology

[0006] In the existing magnetron sputtering equipment, the shielding unit is arranged in the reaction chamber 3. Due to its large volume, it needs to occupy a large space, which not only increases the volume of the reaction chamber 3, but also increases the size of the reaction chamber. 3, resulting in an increase in the manufacturing cost and operating cost of the magnetron sputtering equipment

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