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Optical proximity correction method

A technology of optical proximity correction and graphics, which is applied in the field of photolithography process, and can solve the problems of large errors of metal lines

Active Publication Date: 2013-07-03
CSMC TECH FAB2 CO LTD
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Problems solved by technology

It can be seen that the error between the indented metal line and the actual metal line to be obtained is relatively large, reaching about 30nm in this example, which is unacceptable for OPC correction

Method used

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Embodiment Construction

[0022] The CD (critical dimension) of the key layers of the technology node below 0.13um, such as TO (active area level), GT (gate oxide level), and An (metal connection level), is getting smaller and smaller, and the CD is close to or even smaller than that of lithography. The wavelength of light used in the process, so in the photolithography process, due to the diffraction and interference of light, there is a certain deformation and deviation between the photolithography pattern obtained on the actual silicon wafer and the mask pattern. This kind of error directly affects circuit performance and production yield. In order to eliminate this kind of error as much as possible, an effective method is optical proximity correction (OPC) method. As mentioned in the background art, in some metal-level graphics, some concave-convex structures are added to some metal lines as required. When performing OPC processing on this part of the metal lines, due to the lack of judgment of the...

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Abstract

The invention discloses an optical proximity correction method, wherein a step of judging and modifying an indent is added during OPC (optical proximity correction) treatment for metal lines on the basis of an optical proximity correction process, so that concave-convex structures in the metal lines can achieve the optimal indent during the OPC, thus reducing deformation and deviation between the photoetched pattern actually obtained on a silicon slice and a mask pattern, so as to improve the circuit performance and the production yield of products.

Description

technical field [0001] The invention relates to a photolithography process in the semiconductor manufacturing industry, in particular to an optical proximity correction (Optical Proximity Correction, OPC) method in the process of preparing a mask. Background technique [0002] Integrated circuit manufacturing technology is a complex process that is updated every 18 to 24 months. A key parameter that characterizes integrated circuit manufacturing technology, the minimum feature size, or Critical Dimension, has developed from the initial 125um to the current 0.13um or even smaller, which makes it possible to have millions of components on each chip. [0003] Photolithography is the driving force behind the development of integrated circuit manufacturing processes, and it is also one of the most complex technologies. Compared with other individual manufacturing technologies, photolithography has made a revolutionary contribution to the improvement of chip performance. Before ...

Claims

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Application Information

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IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 陈洁王谨恒张雷万金垠
Owner CSMC TECH FAB2 CO LTD
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