Band gap reconfigurable micro-band ultra wide band filter
An ultra-wideband filter and microstrip technology, applied in waveguide devices, electrical components, circuits, etc., can solve the problems of large insertion loss, wide bandgap bandwidth, and large passband insertion loss, etc., to achieve reconfigurable dual Bandgap response, effect of improving band utilization
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Embodiment 1
[0052] refer to figure 1 with 2 , the present invention is mainly composed of a microstrip dielectric substrate 1, a metal ground plate 2, a pair of input and output microstrip feeders 3, a microstrip resonator 4, a bandgap resonator 5, a PIN tube 8 and a DC bias circuit 10, wherein:
[0053] The microstrip dielectric substrate 1 adopts a single-sided copper-clad dielectric substrate with a dielectric constant of 2.65 and a thickness of 1mm;
[0054] The metal ground plate 2 is arranged on the lower surface of the microstrip dielectric substrate 1, and the metal ground plate 2 is provided with a ground hole 9;
[0055] The microstrip resonator 4 is arranged on the upper surface of the microstrip dielectric substrate 1, and consists of a half-wavelength microstrip line 41, a quarter-wavelength microstrip line 42 and two groups of center-symmetrical "L"-shaped short-circuit stubs 43, wherein , the half-wavelength microstrip line 41 is connected in series with the quarter-wavel...
Embodiment 2
[0063] The structure of this example is identical with embodiment 1, and the parameter value design different from embodiment 1 is as follows:
[0064] Bandgap resonator 5 is made up of two symmetrical ladder impedance resonators 51 and 52, and PIN tube 8, wherein, each ladder impedance resonator is made up of high-impedance line 6 and low-impedance line 7, and in the ladder impedance resonator The length L of the high impedance line 6 4 =5.6mm, width w 4 =0.3mm, low impedance line 7 length L 5 =3.0mm, width w 5 =1.0mm, the corresponding resonant frequency f' 0 =8.0GHz, the distance L between the two stepped impedance resonators 51 and 52 6 =5.4mm.
[0065] The frequency response curve of this embodiment is as Figure 5 with 6 shown by Figure 5 It can be seen that when the PIN tube is turned on, the center frequency of the first bandgap is 5.2GHz, the insertion loss is greater than 26dB, the 3dB bandwidth is about 0.15GHz, the center frequency of the second bandgap is...
Embodiment 3
[0067] The structure of this example is identical with embodiment 1, and the parameter value design different from embodiment 1 is as follows:
[0068] Bandgap resonator 5 is made up of two symmetrical ladder impedance resonators 51 and 52, and PIN tube 8, wherein, each ladder impedance resonator is made up of high-impedance line 6 and low-impedance line 7, and in the ladder impedance resonator The length L of the high impedance line 6 4 =5.6mm, width w 4 =0.4mm, low impedance line 7 length L 5 =3.2mm, width w 5 =1.0mm, the corresponding resonant frequency f' 0 =8.0GHz, the distance L between the two stepped impedance resonators 51 and 52 6 =4.8mm.
[0069] The frequency response curve of this embodiment is as follows Figure 7 with 8 shown by Figure 7 It can be seen that when the PIN tube is turned on, the center frequency of the first bandgap is 5.1GHz, the insertion loss is greater than 25dB, the 3dB bandwidth is about 0.15GHz, the center frequency of the second ba...
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