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Semiconductor structures and methods of forming them

A semiconductor and trench technology, applied in the field of semiconductor structures and their formation, can solve the problems of unstable performance of micro-electromechanical systems, poor morphology of micro-channels 104, etc., and achieve the effect of reducing costs

Active Publication Date: 2016-06-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] However, the poor morphology of the microchannel 104 formed by the prior art may easily lead to unstable performance of the formed MEMS.

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Embodiment Construction

[0033] As mentioned in the background, when using the prior art to form microchannels parallel to the surface of the semiconductor substrate, the surface of the inner wall of the formed microchannel has poor morphology, which easily leads to unstable performance of the formed microelectromechanical system.

[0034] After research by the inventors of the present invention, it is found that in order to avoid depositing the covering layer 103 (such as figure 2 shown), ensure that the deposited material does not fill up the trenches 102 (as figure 1 shown), it is necessary to make the width of the formed trench 102 small, and the aspect ratio is large, so that the deposited material is difficult to fall into the trench 102, and then after the covering layer 103 is deposited, the trench 102 Internally formed channel 104 (as figure 2 shown). However, the existing technology is immature in the etching process for simultaneously forming trenches with high aspect ratio and small w...

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Abstract

Disclosed are a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure includes: providing a semiconductor substrate of which the surface is provided with a first medium layer; forming a groove in the first medium layer, the width of the groove is larger than a preset size; forming protecting layers on the side wall and the bottom surface of the groove, the depth-to-width ratio of the groove in the protecting layers on the side wall and the bottom surface is equal to a preset depth-to-width ratio; and forming a covering layer on the top of the groove after the protecting layers are formed, wherein the groove is closed by the covering layer and a channel is formed in the groove. The formed semiconductor structure is good in shape and stable in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] A micro-electromechanical system (Micro-ElectroMechanicalSystem, referred to as MEMS) is an integrated device that acquires information, processes information and performs mechanical operations. The sensors in it can receive external information such as pressure, position, speed, acceleration, magnetic field, temperature or humidity, and convert it into electrical signals to measure the required external information. [0003] In the existing micro-electromechanical system, it is necessary to form a micro-channel (Pipeline) as a path for inputting gas or liquid, so that the sensor can obtain the required information; secondly, the micro-channel can also be used during the formation of the device. Control the pressure of gas or liquid inside the sensor; in addition, microchann...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00
Inventor 黎坡
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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