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Method for preparing grapheme on basis of controlling ion implantation energy

A technology of ion implantation and energy injection, applied in the field of graphene, which can solve the problems of uneven thickness, uneven number of layers, and great influence of graphene, etc., and achieve the effect of easy transfer, controllable number of layers, and good quality

Inactive Publication Date: 2013-08-14
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the micromechanical exfoliation method can prepare high-quality graphene, but the area of ​​the graphene prepared by this method is less than 1mm×1mm, which can only be used for basic experimental research; the graphene prepared by the SiC sublimation method is greatly affected by the substrate. The number of layers is not uniform, and the substrate transfer cannot be carried out; although the chemical vapor deposition method can prepare a large-area graphene film and is easy to transfer the substrate, the controllability of the graphene film thickness obtained by this method is poor, and nickel metal A multilayer film with uneven thickness will grow on copper, while only a single-layer film and a small amount of double-layer film can grow on copper

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  • Method for preparing grapheme on basis of controlling ion implantation energy
  • Method for preparing grapheme on basis of controlling ion implantation energy
  • Method for preparing grapheme on basis of controlling ion implantation energy

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Embodiment 1

[0020] As shown in the figure, the method for preparing graphene based on controlling the energy of ion implantation in this embodiment includes the following steps:

[0021] The first step: implanting carbon ions into the catalytic substrate based on at least one implanting energy. Wherein, the catalytic substrate includes any material with low carbon solubility, preferably including but not limited to: copper, nickel and the like.

[0022] For example, if figure 1 As shown, carbon atoms are implanted into the copper substrate 10 based on the implantation energy E0, thus, the distribution of each carbon atom based on the implantation energy E0 forms a doped layer 11 in the copper substrate 10, as figure 2 shown.

[0023] Step 2: annealing the catalytic substrate implanted with carbon ions to precipitate the implanted carbon atoms, so as to form at least one graphene film layer on the catalytic substrate surface.

[0024] For example, yes figure 2 The catalytic substrat...

Embodiment 2

[0028] As shown in the figure, the method for preparing graphene based on controlling the energy of ion implantation in this embodiment includes the following steps:

[0029] The first step: implanting carbon ions into the catalytic substrate based on at least one implanting energy. Wherein, the catalytic substrate includes any material with low carbon solubility, preferably including but not limited to: copper, nickel and the like.

[0030] For example, if Figure 5 As shown, carbon atoms are first implanted into the copper substrate 20 based on the implantation energy E1, and then carbon atoms are implanted into the copper substrate 20 based on the implantation energy E2. Preferably, the energy E1>energy E2, thus, each based on the implantation energy E1 Carbon atoms are distributed in the copper substrate 20 to form a doped layer 21, and each carbon atom based on the implantation energy E2 is distributed to form a doped layer 22 in the copper substrate 20, such as Figure...

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Abstract

The invention provides a method for preparing grapheme on the basis of controlling ion implantation energy. As per the method provided by the invention, firstly, acrbonic ions are implanted into a catalytic substrate based on at least on implantation energy; then the catalytic substrate implanted with acrbonic ions is subjected from annealing so as to enable the acrbonic ions to be separated out, and at least one grapheme thin layer is formed on the surface of the catalytic substrate; and finally, the catalytic substrate with the grapheme thin layer on the surface is removed so as to obtain at least one grapheme thin layer. The grapheme prepared by the method has good quality, large size and controllable layer number, is easy to transfer compared with a SiC (suppressed ion chromatography) sublimed method, and has controllable layer number as compared with a chemical vaporous depositon method.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a method for preparing graphene based on controlling the energy of ion implantation. Background technique [0002] In 2004, two scientists from the University of Manchester in the United Kingdom discovered graphene using the method of micromechanical exfoliation, and won the Nobel Prize in Physics in 2010. Since the carrier mobility in graphene is as high as 2*10 5 cm 2 ·V -1 , whose mobility is much higher than that of silicon materials used on a large scale in the semiconductor industry, so it is considered as a substitute for silicon in future nanoelectronic devices. In addition, graphene is also widely used in the fields of light and electricity, for example, graphene-based lithium-ion batteries, solar cells, gas detectors and some devices. However, the application of graphene in the fields of optics and electricity is based on large-area graphene films with a controllable number ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/02
Inventor 狄增峰王刚张苗陈达叶林郭庆磊丁古巧谢晓明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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