Method for rapidly preparing transition metal chalcogenide composite optical fiber material

A technology of transition metal chalcogenide and composite optical fiber, which is applied in the direction of cladding optical fiber, microstructure optical fiber, optical fiber, etc. It can solve the problems of complex growth process, long growth cycle, and low quality, so as to simplify the preparation process, promote uniform growth, Favorable Diffusion Effect

Active Publication Date: 2019-12-10
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as far as the composite material preparation of two-dimensional TMDC material integrated optical fiber is concerned, it still faces problems such as complex growth process, long growth cycle, low quality and uncontrollable quality. How to effectively and easily prepare high-quality TMDC composite optical fiber material is an urgent issue. problem to be solved

Method used

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  • Method for rapidly preparing transition metal chalcogenide composite optical fiber material
  • Method for rapidly preparing transition metal chalcogenide composite optical fiber material
  • Method for rapidly preparing transition metal chalcogenide composite optical fiber material

Examples

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Effect test

Embodiment 1

[0046] exist figure 1 In the shown schematic diagram of the device of the present invention, an ordinary total reflection optical fiber with an inner diameter of 50um is used as a substrate to prepare a molybdenum disulfide composite optical fiber material, and the specific steps are as follows:

[0047] (1) Put the sulfur powder in the first temperature zone of the high-temperature tube furnace, and place the optical fiber soaked in 10 mg / mL sodium molybdate solution in the second temperature zone. And the distance between the optical fiber and the sulfur source is controlled within 12cm.

[0048] (2) After using a vacuum pump to evacuate to 0.1Pa, introduce inert gas Ar as the carrier gas and protective gas, and maintain the pressure inside the tube to 220Pa.

[0049] (3) Control the second temperature zone to raise the temperature to 110°C, dry at low pressure for 30 minutes, and then raise the temperature to 820°C. At this time, the first temperature zone is controlled at...

Embodiment 2

[0052] exist figure 1 In the shown schematic diagram of the device of the present invention, a photonic crystal fiber is used as a substrate to prepare a molybdenum disulfide composite photonic crystal fiber material, and the specific steps are as follows:

[0053] (1) Put the sulfur powder in the first temperature zone of the high-temperature tube furnace, and place the optical fiber soaked in 12 mg / mL sodium molybdate solution in the second temperature zone. And the distance between the optical fiber and the sulfur source is controlled within 12cm.

[0054] (2) After using a vacuum pump to evacuate to 0.1Pa, introduce inert gas Ar as the carrier gas and protective gas, and maintain the pressure inside the tube to 220Pa.

[0055] (3) Control the second temperature zone to raise the temperature to 110°C, dry at low pressure for 30 minutes, and then raise the temperature to 820°C. At this time, the first temperature zone is controlled at 150°C and begins to enter the growth st...

Embodiment 3

[0058] exist figure 1 In the schematic diagram of the device of the present invention shown, an ordinary total reflection optical fiber with an inner diameter of 5um is used as the substrate, sodium tungstate is used as the tungsten source to infiltrate the optical fiber, and a tungsten disulfide composite optical fiber material is prepared under low pressure and high temperature conditions. The specific steps are as follows:

[0059] (1) Put the sulfur powder in the first temperature zone of the high-temperature tube furnace, and place the optical fiber soaked in 50 mg / mL sodium tungstate solution in the second temperature zone. And the distance between the optical fiber and the sulfur source is controlled within 10cm.

[0060] (2) After using a vacuum pump to evacuate to 0.1Pa, introduce inert gas Ar as the carrier gas and protective gas, and maintain the pressure inside the tube to 220Pa.

[0061] (3) Control the second temperature zone to raise the temperature to 110°C, d...

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Abstract

The invention relates to a method for rapidly preparing a transition metal chalcogenide composite optical fiber material. The preparation method comprises the following steps: infiltrating the opticalfiber by adopting molybdic acid or sodium tungstate/potassium salt solution, and then directly depositing high-quality single-layer or few-layer transition metal chalcogenide on the inner wall of anair duct in the center of the optical fiber or on the inner walls of a cladding air hole and a fiber core air duct of the photonic crystal fiber under the conditions of low pressure and high temperature. The optical fiber is made of quartz or quartz polymer. The excellent optical and electrical properties of the transition metal chalcogenide composite and the characteristics of the photonic structure of the optical fiber are combined to realize the multifunctional integration of the two-dimensional TMDC material and the optical fiber. The method has the characteristics of low cost, simple preparation method, short growth period and controllable layer number of the transition metal chalcogenide. The prepared transition metal chalcogenide composite optical fiber has potential application inthe fields of optical communication, sensing and novel optical devices.

Description

technical field [0001] The invention belongs to the field of optical fiber technology, and in particular relates to a method for rapidly preparing a transition metal chalcogen compound composite optical fiber material. Background technique [0002] Transition metal dichalcogenides (TMDCs) are the most studied family of two-dimensional materials besides graphene. This large class of two-dimensional materials has a similar lattice structure, that is, two layers of chalcogen nuclei sandwiched by hexagonal close-packed transition metal atoms are combined in the form of triangular prism coordination to form a sandwich-like layered structure. Moreover, the energy band gap is related to the number of atomic layers, which has become a research hotspot in the fields of materials science and optoelectronics. Compared with zero-bandgap materials such as graphene and topological insulators, TMDC is a semiconductor material with a wide bandgap, and the bandgap width changes with the thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/02G02B1/00G02F1/355C03C25/42C03C25/223C03C25/106
CPCC03C25/106C03C25/223C03C25/42G02B1/00G02B6/02G02B6/02295G02F1/3551
Inventor 刘开辉左勇刚于文韬刘灿梁晶
Owner PEKING UNIV
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