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Method of preparing hanging graphene support film by selectively etching growth substrate

A graphene film and graphene technology, applied in graphene, crystal growth, single crystal growth, etc., can solve the problems of large-scale preparation of graphene support film, unstable process, high cost, etc., to achieve high integrity, The effect of simple process and low cost

Active Publication Date: 2019-03-08
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can avoid the pollution of polymers, the cost is high, the process is unstable, and the graphene support film cannot be prepared on a large scale; 3. Spin-coat photoresist to protect graphene in advance, and selectively etch graphite by photolithography technology Graphene growth substrate, directly obtained suspended graphene after removing the photoresist
This method can prepare graphene-supported films in batches, but photoresist contamination on the graphene surface is still unavoidable

Method used

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  • Method of preparing hanging graphene support film by selectively etching growth substrate
  • Method of preparing hanging graphene support film by selectively etching growth substrate
  • Method of preparing hanging graphene support film by selectively etching growth substrate

Examples

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Embodiment 1

[0066] Example 1. Selective etching of copper foil substrate to prepare graphene support film

[0067] figure 1 It is a process flow diagram of the present invention. A specific implementation process is as follows:

[0068] 1) A graphene film with a controllable number of layers is grown on a copper foil substrate by low-pressure chemical vapor deposition (LPCVD).

[0069] Growth of single-layer large single-crystal graphene: Copper foil (purity 99.8%, thickness 25 microns) is first annealed at 1030°C and 100 sccm hydrogen atmosphere for 30 minutes, and the pressure is kept at about 100 Pa to remove organic matter and oxide layer. Then anneal in 100 sccm argon for 30 minutes to passivate the active sites on the surface of the copper foil. After the annealing process is completed, the graphene is grown at 1030° C. in an atmosphere of 500 sccm hydrogen and 1 sccm methane, the pressure is about 500 Pa, and the growth time is 3 hours.

[0070] Growth of double-layer graphene...

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Abstract

The invention discloses a method of preparing a hanging graphene support film by selectively etching a growth substrate. The preparation method avoids a graphene transfer process, is high in efficiency and low in cost and can obtain the high-quality graphene support film by one-step etching. The prepared graphene support film does not require auxiliary support by any high polymer films and high polymer fibers; the number of layers of the graphene support film is controllable; the graphene support film is high in completeness (90-97%), large in hanging area (a diameter is 10-50 micrometers) andwide in clean area (greater than 100 nm); massive preparation can be achieved. In addition, the graphene support film can be directly used for a transmission electron microscope support film and achieve high resolution imaging of nano particles.

Description

technical field [0001] The invention relates to a method for selectively etching a growth substrate to prepare a suspended graphene support film. Background technique [0002] Graphene, as a single atomic layer two-dimensional material with high mechanical strength, high electrical conductivity, and high thermal conductivity, has good application prospects in the fields of support membranes, filter membranes, and diaphragms. For example, a suspended graphene film can be used as a transmission electron microscope grid to improve imaging resolution; a suspended single-layer graphene can be directly used as a hydrogen isotope separation film to achieve hydrogen isotope enrichment. Among the existing graphene preparation methods, chemical vapor deposition (CVD) can produce high-quality graphene films in batches on copper foil and other metal substrates, meeting the needs of large-scale graphene applications. However, it is still a major challenge to detach graphene from the sup...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194
CPCC01B32/194C01B2204/04C30B29/02C30B33/02C30B25/02B82Y30/00B82Y40/00C30B25/10C30B25/165C30B25/18
Inventor 彭海琳郑黎明邓兵
Owner PEKING UNIV
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