Multilayer symmetric metamaterial based on phase-change material or topological insulating material

A technology of topological insulation and phase change materials, applied in electrical components, antennas and other directions, can solve the problems of complex tuning devices, difficult to apply tuning methods, increasing the complexity of metamaterial structure design and the difficulty of preparation process, etc.

Active Publication Date: 2013-08-14
DALIAN UNIV OF TECH
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the above method requires a complex tuning device, which increases the complexity of the metamaterial structure design and the difficulty of the preparation process, making it difficult to apply the above tuning method to higher frequency bands such as near-infrared light bands.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer symmetric metamaterial based on phase-change material or topological insulating material
  • Multilayer symmetric metamaterial based on phase-change material or topological insulating material
  • Multilayer symmetric metamaterial based on phase-change material or topological insulating material

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0018] First, an N (N>=1) layer multilayer structure (metal layer 3-phase change material or topological insulating material layer 4-metal layer 3-oxidation layer 5) 2 is formed on the glass substrate 1 by a material growth process, such as attached figure 2 (a) shown.

[0019] Second, deposit SiO on the multilayer structure 2 2 film as a mask 6, as attached figure 2 (b) shown.

[0020] Then, the designed resonant cell array is transferred to the mask through the mask process, as shown in the attached figure 2 (c) shown. Among them, the structure design can adopt algorithms such as finite time domain difference method and finite element method.

[0021] Then, through an etching process, a resonant unit array 7 is prepared on the 2 material, and the resonant unit array is arranged in a rectangular lattice (that is, on the surface of the metamaterial, the horizontal period length L of the resonant unit x and vertical cycle length L y unequal) simultaneously penetrate t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a multilayer symmetric metamaterial based on a phase-change material or a topological insulating material. A resonant unit array of the multilayer symmetric metamateiral is arranged in a rectangular lattice form (namely, on the surface of the metamaterial, the horizontal cycle length Lx and the vertical cycle length Ly of a resonant unit are not equal), so that steep asymmetric Fano harmonic peaks exist in the transmission spectrum of the multilayer symmetric metamaterial; and then, the phase-change material or the topological insulating material is introduced into the multilayer symmetric metamaterial, and the Fano resonant frequency is tunable, so that the technical problem that the Fano resonant frequency cannot be changed after determination of the metamaterial structure is solved. The characteristic that the dielectric coefficient of the phase-change material or the topological insulating material changes along with the change of an extra electric field or the temperature is used in the invention, so that the tunability function of the Fano resonant frequency in the multilayer symmetric metamaterial is realized, and the maximum adjusting amplitude can be up to 40 percent.

Description

technical field [0001] The invention relates to a multi-layer symmetrical metamaterial with tunable Fano resonance phenomenon based on phase change material or topological insulating material, which can be applied to the fields of slow light, sensing, nonlinearity, optical switch and the like. Background technique [0002] In 2001, Document 1: "R.A. Shelby et al, SCIENCE, 2001(292): 77" was the first to report artificial electromagnetic metamaterials with negative refractive index in the microwave range. Since then, artificial electromagnetic metamaterials have attracted widespread attention. With the deepening of research on metamaterials, the phenomenon of Fano resonance on metamaterials has also attracted much attention. In 2007, Document 2: "V.A. Fedotove et al, PHYSICAL REVIEW LETTER, 2007(99): 147701" found Fano resonance in an asymmetric resonant ring array for the first time. However, once the structure of the metamaterial is determined, the Fano resonance character...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01Q15/00
Inventor 曹暾
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products