A memristor-based image sensor

Abstract

The invention discloses an image sensor based on a memristor. The image sensor comprises a reading control circuit, an information cache, a signal processing module and a plurality of pixel point units, wherein the reading control circuit is connected with the input ends of the plurality of pixel point units respectively; the output ends of the pixel units are connected with the input end of the information cache; the output end of the information cache is connected with the signal processing module; each pixel point unit comprises a photodiode and a memristor which are connected in series; the output end of the memristor is connected with a reset signal and the input end of the information cache respectively; and control switches are connected between the memristor and the reset signal as well as between the memristor and the information cache. The image sensor is simple in structure, the advantages of a CCD (Charge Coupled Device) and a CMOS (Complementary Metal Oxide Semiconductor) are combined skillfully while the defects are avoided, leakage noise is reduced, and solid image noise is reduced; and the image sensor outputs in a uniform control way, so that the working speed is increased, and the power consumption is lowered.

Description

technical field [0001] The patent of the present invention relates to the field of solid-state image sensing, in particular to an image sensor based on a memristor. Background technique [0002] There are two types of solid-state image sensors commonly used in the prior art, namely CCD and CMOS, both of which have advantages and disadvantages during use. [0003] The pixel structure of the CCD image sensor uses the CCD to realize the transfer and transmission of the photoelectric conversion signal charge. The pixel structure of the CCD image sensor is composed of a photodiode for photoelectric conversion, a readout gate, and a vertical CCD for charge transfer. CCD directly transmits signal charges during operation, so it is easy to generate light leakage noise. Moreover, the signal charges can only be output in sequence according to the pixel arrangement, the working speed is slow, and the degree of freedom of operation is poor; the complex circuit structure and passive ch...

AI Technical Summary

Problems solved by technology

Since the unevenness of each amplifier can easily cause fixed image noise, the resolution and signal-to-noise ratio of the CMOS image sensor are relatively low during operation.

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