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Multi-junction solar cell and manufacturing method thereof

A solar cell and battery technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of poor spectral response, poor uniformity of quantum dots, and current mismatch of three-junction cells, achieve high conversion efficiency, improve minority carrier life, Reduce the effect of carrier recombination

Inactive Publication Date: 2013-09-04
TIANJIN SANAN OPTOELECTRONICS
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Problems solved by technology

[0004] In order to solve the current mismatch of the traditional three-junction battery, the insertion of the quantum dot structure in the middle battery has the disadvantages of poor spectral response and poor uniformity of the quantum dots in the active area. The solar cell structure and preparation method are used to improve the spectral response of the quantum dot structure, reduce the transition loss between quantum dots, and increase the short-circuit current of the triple-junction cell, thereby further improving the photoelectric conversion efficiency of the multi-junction solar cell

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  • Multi-junction solar cell and manufacturing method thereof

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with the examples, but the protection scope of the present invention should not be limited thereby.

[0035] Such as figure 1 As shown, a triple-junction solar cell includes: Ge bottom cell 100, In 0.01 Ga 0.99 Cells in As and Ga 0.5 In 0.5 The P-top cell 300 and each junction cell are connected in series through tunnel junctions 500 and 510 .

[0036] The Ge bottom cell 100 is formed by self-diffusion on a P-type Ge substrate. In MOCVD equipment, pre-pass PH 3 And growing the GaInP initial layer can make the P atoms diffuse into the Ge substrate to form an N-type Ge emission region, and the thickness of the emission region is about 0.1um.

[0037] A tunnel junction 500 is used to connect the Ge bottom cell 100 and the middle cell. Tunneling junction 500 is a heavily doped PN junction with tunneling effect, generally composed of n-type and p-type heavily doped GaAs, AlGaAs, GaInP and other mater...

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Abstract

The invention discloses a multi-junction solar cell, in particular to a Ga0.5In0.5P / In0.01Ga0.99As / Ge multi-junction solar cell. The multi-junction solar cell is characterized by the multi-junction solar cell of C size comprising a lamination InxGal-xAs quantum-dot stress modulation layer and a multi-layer self-assembling InAs quantum-dot molecular structure formed under stress modulation. The current of the multi-junction solar cell can be increased, the photoelectric conversion efficiency is increased, and the radiation resisting performance of the multi-junction solar cell is enhanced at the same time.

Description

technical field [0001] The invention relates to a high-efficiency multi-junction solar cell manufacturing technology, which belongs to the technical field of semiconductor materials. More specifically, the present invention relates to a group III-V multi-junction semiconductor solar cell with an epitaxially grown stacked quantum dot structure. Background technique [0002] For solar cells, the available solar spectrum wavelength is 300-2000 nm, and single-junction solar cells can only cover and utilize sunlight in a certain wavelength range. For conversion efficiency, the general practice is to combine a variety of semiconductor materials with different band gaps to form a multi-junction solar cell. [0003] The GaInP / InGaAs / Ge triple-junction solar cell is one of the most commonly used multi-junction solar cell structures because of the lattice matching of the epitaxial layer and the simple epitaxial growth. Under concentrating conditions, GaInP / InGaAs / Ge triple-junction ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0687H01L31/0352H01L31/18
CPCY02E10/544Y02P70/50
Inventor 刘建庆林桂江王良均丁杰毕京锋
Owner TIANJIN SANAN OPTOELECTRONICS