Composite conductive structure, manufacturing method thereof and display and touch panel with composite conductive structure
A composite conductive and touch panel technology, used in cable/conductor manufacturing, conductive layers on insulating carriers, circuits, etc., can solve problems such as circuit breakage, drive resistance, fragmentation, affecting product durability and sensitivity, and avoid The effect of line disconnection, durability and sensitivity improvement
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no. 1 example
[0031] Please refer to Figure 1A ~ Figure 1D , which shows a schematic diagram of the manufacturing process of the first conductive layer M1 according to an embodiment of the present invention. Such as Figure 1A As shown, a substrate 100 is provided, and the material of the substrate 100 is, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), triacetate cellulose (TriacetateCellulose, TAC), polycarbonate Ester (Polycarbonate, PC) or polyimide (Polyimide, PI). Next, if Figure 1B As shown, a barrier layer (barrier layer) 120 is formed on the substrate 100, for example, the barrier layer 120 is formed by silicon oxide (SiO X ), alumina (AlO X ) or zinc oxide (ZnO) is deposited on the substrate 100. The thickness of the barrier layer 120 is, for example, 10 nanometers (nm) to 1000 nm. Of course, as long as the barrier layer 120 can avoid the formation of the conductive layer after the substrate 100 is affected by the gas released during the manu...
no. 2 example
[0044] Please refer to Figure 2A ~ Figure 2C , which shows a schematic diagram of the manufacturing process of the second conductive layer M2 according to another embodiment of the present invention. Such as Figure 2A As shown, a substrate 200 is provided. The material of the substrate 200 is, for example, the same as that of the substrate 100 of the first embodiment, and a barrier layer 220 is formed on the substrate 200. The material, thickness and formation method of the barrier layer 220 are the same as those of the barrier layer 120. Moreover, the structure of the barrier layer 220 can be omitted according to the requirements of the manufacturing process.
[0045] Please refer to Figure 2B , forming a conductive material layer 240 on the barrier layer 220 . In this embodiment, the conductive material layer 240 is formed by, for example, depositing indium tin oxide (ITO) on the barrier layer 220 by roll-to-roll physical vapor deposition. Next, please refer to Figu...
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