Groove-type silicon nanocrystalline memory and manufacturing method thereof

Abstract

The invention discloses a groove-type silicon nanocrystalline memory and a manufacturing method thereof. The groove-type silicon nanocrystalline memory comprises a groove formed in the surface of an etching silicon substrate, a main structure of the silicon nanocrystalline memory formed in the groove, a polysilicon gate covered above the groove of the silicon substrate, and a source electrode and a drain electrode formed in the silicon substrate on two sides of the groove, and the main structure comprises a tunneling oxidation layer, silicon nanocrystalline and an inter-gate oxidation layer sequentially from bottom to top. According to the manufacturing method, the groove-type silicon nanocrystalline memory can be manufactured only by etching the groove on the substrate and manufacturing devices on the groove, so that the method is simple; the manufacturing method is completely compatible with conventional CMOS (complementary metal oxide semiconductor) processes, and the devices are good in storage characteristic and high in reliability and quite suitable for large-scale production and wide application; smiling effect in the process of manufacturing of peripheral devices can be thoroughly avoided from oxidizing the silicon nanocrystalline, so that storage characteristics and the like of the devices are guaranteed.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a grooved silicon nanocrystal memory and a manufacturing method thereof. Background technique [0002] With the continuous advancement of microelectronics process nodes, the traditional flash memory technology based on polysilicon floating gates is facing serious technical difficulties. The most important problem is that the contradiction between device size miniaturization and device reliability cannot be effectively resolved. . To solve this contradiction, S.Tiwari proposed silicon nanocrystal memory based on discrete storage in 1996. This kind of memory has the advantages of fast erasing and writing speed, high reliability, simple manufacturing process, low cost, and full compatibility with traditional CMOS technology. Volatile memory. [0003] However, there are also problems in process integration for silicon nanocrystal floating gate memory, especially the existence of hi...

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Problems solved by technology

In this way, when making the gate oxide layer of peripheral devices, under high temperature conditions, oxygen or water molecules will quickly migrate into the middle of the device along the tunnel oxide layer and inter-gate oxide layer of the silicon nanocrystal storage unit, resulting in the oxidation of the silicon nanocrystal , so the tunneling oxide layer at the edge of the device will also thicken, and the storage characteristics of the final device will deteriorate, that is, the traditional silicon nanocrystal device will be affected by the smiling effect during the fabrication process, such as figure 1 shown

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