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Preparation method of pure alpha-SiC material with through-hole structure

A technology of granular materials and mixed powders, which is applied in the field of preparation of pure α-SiC materials and can solve problems such as difficulties in the preparation of pure α-SiC materials

Inactive Publication Date: 2013-09-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a preparation process of pure α-SiC material with through-hole structure, to solve the problem of difficult preparation of pure α-SiC material with through-hole structure

Method used

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  • Preparation method of pure alpha-SiC material with through-hole structure
  • Preparation method of pure alpha-SiC material with through-hole structure
  • Preparation method of pure alpha-SiC material with through-hole structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Prepare mixed powder according to mass percentage and formula: silicon carbide 99.5%, B 4 C powder 0.5%, the sum of each component is 100%, ball milled with a planetary ball mill for half an hour and mixed evenly. Put the graphite crucible with powder into the cylinder of the intermediate frequency induction sintering furnace, and cover the top of the crucible with graphite paper and an upper carbon felt insulation layer. Cover the furnace cover of the induction sintering furnace, and evacuate until the pressure in the furnace is less than 10 3 Pa, filled with argon until the pressure in the furnace is greater than 4×10 4 Pa. Heat the graphite crucible to 2100°C, the temperature at the graphite paper is 1900°C, pump air until the pressure is 2×10 4 Pa, keep warm for 4h, make B 4 The C-doped SiC powder nucleates and grows under the graphite paper cover on the top of the crucible through the gas-liquid-solid (VLS) mechanism and the silicon carbide growth screw disloca...

Embodiment 2

[0023] Prepare mixed powder according to mass percentage and formula: silicon carbide 99.%, B 4 C powder 1%, the sum of each component is 100%, ball milled with a planetary ball mill for half an hour and mixed evenly. Put the graphite crucible with powder into the cylinder of the intermediate frequency induction sintering furnace, and cover the top of the crucible with graphite paper and an upper carbon felt insulation layer. Cover the furnace cover of the induction sintering furnace, and evacuate until the pressure in the furnace is less than 10 3 Pa, filled with argon until the pressure in the furnace is greater than 4×10 4 Pa. Heat the graphite crucible to 2200°C, the temperature at the graphite paper is 2000°C, pump air until the air pressure is 1.8×10 4 Pa, keep warm for 3h, make B 4 The C-doped SiC powder nucleates and grows under the graphite paper cover on the top of the crucible through the gas-liquid-solid (VLS) mechanism and the silicon carbide growth screw disl...

Embodiment 3

[0025] Prepare mixed powder according to mass percentage and formula: silicon carbide 97.5%, B 4 C powder 2.5%, the sum of each component is 100%, and it is mixed evenly with a planetary ball mill for half an hour. Put the graphite crucible with powder into the cylinder of the intermediate frequency induction sintering furnace, and cover the top of the crucible with graphite paper and an upper carbon felt insulation layer. Cover the furnace cover of the induction sintering furnace, and evacuate until the pressure in the furnace is less than 10 3 Pa, filled with argon until the pressure in the furnace is greater than 4×10 4 Pa. Heat the graphite crucible to 2300°C, the temperature at the graphite paper is 2100°C, pump air until the air pressure is 1.6×10 4 Pa, keep warm for 2h, make B 4 The C-doped SiC powder nucleates and grows under the graphite paper cover on the top of the crucible through the gas-liquid-solid (VLS) mechanism and the silicon carbide growth screw disloca...

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Abstract

The invention discloses a preparation method of a pure SiC material with a through-hole structure. The preparation method comprises the following steps of: uniformly mixing silicon carbide powder with boron carbide powder, and then putting the mixture into a graphite crucible; putting the graphite crucible into an induction sintering furnace; covering graphite paper or a graphite cover on the top part of the crucible; vacuumizing and inflating argon of which the pressure is higher than 4*10<4>Pa, then heating to 2100-2600 DEG C, and preserving the heat for 0.5-4 hours; delivering B4C doped SiC powder to the top of the crucible through sublimation at a high temperature; and performing nucleation growing on the silicon carbide below the graphite paper on the top of the crucible through VLS (vapor-liquid-solid) and screw dislocation mechanisms. The pure alpha phase SiC porous ceramic material with the through-hole structure obtained on a graphite paper cover can be widely applied in the environmental protection fields including tail gas particle traps of diesel engined cars or catalyst carriers, tail gas treatment and sewage treatment.

Description

technical field [0001] The invention relates to a method for preparing a porous SiC material, in particular to a method for preparing a pure α-SiC material with a through-hole structure. Background technique [0002] SiC porous ceramics have the advantages of low density, small thermal expansion coefficient, high strength, high temperature resistance, corrosion resistance, oxidation resistance, thermal shock resistance and long service life, and have broad application prospects in the fields of metallurgy, chemical industry, environmental protection and energy. SiC through-hole materials also have the advantages of low density, high stiffness, large specific surface area, good energy absorption and vibration reduction performance, good noise reduction and noise reduction effects, and high electromagnetic shielding performance. [0003] At present, the preparation technologies of SiC porous materials are: 1) oxidation bonding method: SiC, Al 2 o 3 , C as raw material, C act...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B38/00C04B35/565C04B35/622
Inventor 杨建锋刘波波史永贵景文甲徐照芸王波鲍崇高
Owner XI AN JIAOTONG UNIV