Inverter topology in high frequency application and control method of inverter topology

A technology of inverter and topology, applied in the field of inverter topology and its control, can solve the problem of high cost and achieve the effect of low cost, high efficiency and low price

Active Publication Date: 2013-09-18
SANTAK ELECTRONICS SHENZHEN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, Q1 and Q4 need ultra-fast recovery parasitic body diodes, but the cost of this type of Cool MOS is very high

Method used

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  • Inverter topology in high frequency application and control method of inverter topology
  • Inverter topology in high frequency application and control method of inverter topology
  • Inverter topology in high frequency application and control method of inverter topology

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Embodiment Construction

[0077] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0078] According to the analysis of the background technology, in order to realize the high frequency of the inverter, it is necessary to reduce the switching loss of the power switch tube at high frequency, and at the same time, it must have low conduction loss. It is a good choice to use Cool MOS as the power switch tube, but in the three-level inverter, due to the nonlinearity of the load, it is necessary to consider the impact of the reverse freewheeling current on the high-frequency switching in the case of a nonlinear load. The effect of the parasitic body diode of the tube. Using Cool MOS with good reverse...

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Abstract

The invention provides inverter topology in high frequency application. The inverter topology comprises a first capacitor, a second capacitor, a first power switch tube, a second power switch tube, a third power switch tube, a fourth power switch tube, a second diode and a third diode, wherein each power switch tube comprises a reversely parallel parasitic body diode; the first capacitor and the second capacitor are in series, the two ends of the first capacitor and the two ends of the second capacitor are respectively connected to a positive DC (direct current) bus and a negative DC bus so as to provide DC input and output; a connection part of the second power switch tube and the third power switch tube is connected with an inductor so as to provide AC (alternating current) output; the first power switch tube and the fourth power switch tube are respectively connected with a reverse fifth power switch tube and a reverse sixth power switch tube in series, and each power switch tube comprises the reversely parallel parasitic body diode so that the follow current flowing the parasitic body diodes of the first power switch tube and the fourth power switch tube is blocked by controlling the switch on and off of the fifth power switch tube and the sixth power switch tube; meanwhile, the positive DC bus and the negative DC bus are respectively connected with a separate first diode and a separate second diode in parallel to provide a follow current circuit.

Description

technical field [0001] The invention relates to the field of inverters, in particular to an inverter topology in high-frequency applications and a control method thereof. Background technique [0002] In today's inverter field, it is one of the development trends to design inverters with smaller volume and higher power density. Super Junction Field Effect Transistor (Cool MOSFET, abbreviated as Cool MOS) is a new generation of semiconductor switching device with extremely small on-resistance and no current tailing phenomenon of insulated gate bipolar transistor (IGBT). It has been widely used in the field of high-frequency communication power supply. However, the application of Cool MOS to high-frequency inverters has certain limitations. Because: (1) The reverse recovery of the parasitic body diode is poor, causing the freewheeling current (ie passive current) to generate a large reverse recovery current on the diode, resulting in high switching losses and even the risk o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/48H02M7/537
CPCH02M7/487H02M7/5388H02M7/537H02M1/0051H02M1/0054Y02B70/10
Inventor 谢胜仁冯卓民顾亦磊
Owner SANTAK ELECTRONICS SHENZHEN
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