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LED excited solar cell photoluminescence detection device

A technology of solar cells and detection devices, applied in the direction of material excitation analysis, etc., can solve problems such as impractical realization and limited wavelength range

Inactive Publication Date: 2013-09-25
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the Chinese invention patent application 201010510730.8 "Solar Cell Defect Detection Method" requires a laser controller to adjust the wavelength of the laser beam within the wavelength of 0-900nm, the existing technology is not yet practical, because the laser wavelength is determined by the characteristics of the working medium itself Determined, the wavelength range adjusted by the controller is limited

Method used

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  • LED excited solar cell photoluminescence detection device
  • LED excited solar cell photoluminescence detection device
  • LED excited solar cell photoluminescence detection device

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Embodiment Construction

[0016] The specific embodiment of the present invention is given below in conjunction with the accompanying drawings to illustrate the structural features and functional points of the present invention, but the specific implementation of the present invention is not limited to this embodiment.

[0017] figure 1 It is a schematic diagram of a solar cell photoluminescence detection device for LED lighting of the present invention. The photoluminescence image is acquired by a CCD camera (3), and the CCD can be a silicon material CCD or an InGaAs CCD. Silicon CCDs are inexpensive and have high spatial resolution, but have low sensitivity in the infrared band. Since the photoluminescence wavelength of solar cells is in the infrared, silicon CCD devices are not sensitive to photoluminescence with a peak value of 1050 nm, but are very sensitive to excitation light. The intensity of photoluminescence light is only one ten-thousandth of the intensity of excitation light, or even lowe...

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Abstract

The invention relates to a silicon chip and solar cell photoluminescence detection device, especially to a photoluminescence detection device for realizing uniform excitation radiation by the utilization of a plurality of LED light source modules (5). The device provided by the invention is composed of a CCD camera (3), a long-wavelength pass filter (4), a data acquisition computer (1), an acquisition card (2), light source modules (5) and a driving power (6). Luminescent sources used by the light source modules (5) are monochromatic large power light emitting diodes (LEDs). The light source modules are symmetrically installed sidelong above a solar cell slice (7) relative to the central normal of the measured solar cell slice (7). Irradiation rays of the symmetrically-installed light source modules (5) are superposed mutually on the surface of the solar cell slice (7) to form uniform irradiation excitation radiation. Wavelength of the LEDs for the light source modules can be independently selected according to needs. The device provided by the invention is adopted to mainly solve problems of complex structure, poor irradiation uniformity, high maintenance cost and the like which are caused by laser used as an excitation light source in a disclosed scheme, and has advantages of convenient maintenance, selectable excitation wavelength, freely-adjustable irradiance level and the like.

Description

technical field [0001] The invention relates to a silicon wafer and solar cell photoluminescence detection device, in particular to a silicon wafer and solar cell photoluminescence detection device which utilizes a plurality of LED light source modules to realize uniform excitation radiation. Background technique [0002] In recent years, the solar cell industry has achieved rapid development in my country. In the production process of solar cells, how to quickly detect its quality in each link is an important issue. The photoluminescence detection method uses light to irradiate the photovoltaic cell material to excite the electrons in the material to a high energy level, and when the high energy level electrons transition to a low energy level, photons are emitted, resulting in photoluminescence. By observing the photoluminescence of the material, various information such as the minority carrier diffusion length of the material, the surface resistance distribution, and the...

Claims

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Application Information

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IPC IPC(8): G01N21/63
Inventor 郑晓东秦文红闻春敖陈新
Owner ZHEJIANG UNIV
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