Preparation method of composite nanofiltration heterostructure capable of generating quantum dots on side wall of nanowire

Abstract

The invention discloses a preparation method of a composite nanofiltration heterostructure capable of generating quantum dots on the side wall of a nanowire and relates to the field of nano engineering. An MOCVD device is applied to the preparation method. The preparation method comprises the flowing steps of depositing nano metal particles or metal film on an substrate, forming nano alloy particles after annealing, using the nano alloy particles as catalytic substances, generating the nanowire in the direction perpendicular to the substrate, ending the axial growth of the nanowire, and generating a single layer of quantum dots or multiple layers of the quantum dots on the side wall of the nanowire. Due to the adoption of the MOCVD device, the quantum dots directly grow on the side wall of the nanowire which is in a hexagonal-column shape, tedious steps of an existing preparation method are simplified, and the preparation cost is reduced. Meanwhile, due to the fact that film covers the quantum dots, wherein the film and the nanowire are made of the same materials, the multiple layers of the quantum dots can generate on the side wall of the nanowire, and the obtained composite nanofiltration heterostructure is made to be better. Therefore the preparation method of the composite nanofiltration heterostructure capable of generating the quantum dots on the side wall of the nanowire has a broad application prospect in a new generation of nano photoelectronic devices.

Description

technical field [0001] The invention relates to the technical field of nano-engineering, in particular to a method for preparing a composite nano-heterostructure in which quantum dots are grown on the side walls of nanowires. Background technique [0002] In recent years, semiconductor nanowires have attracted widespread attention due to their unique structures and novel properties. Nano-optoelectronic and nano-electronic devices such as nano-lasers, field-effect transistors, light-emitting diodes, solar cells and data storage devices that have been published have shown broad application prospects. As an important structural unit of high-performance nano-optoelectronic devices, nanowire heterostructures have become a current research hotspot, among which nanowire axial heterojunctions, core-shell heterojunctions, and single-core multi-shell heterojunctions are the most widely studied. [0003] Recently, research on nanocomposite structures combining nanowires and quantum do...

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is: how to provide a method for preparing a composite nano-heterostructure in which quantum dots are grown on the sidewall of a nanowire, so as to overcome the cumbersome defects of the existing preparation methods and simplify the preparation steps

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