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Compound semiconductor device and manufacturing method thereof

A semiconductor and compound technology, applied in the field of manufacturing compound semiconductor devices, can solve the problems of difficulty in regaining 2DEG, etching damage to the electron supply layer, and increasing the resistance of the electron supply layer.

Active Publication Date: 2016-03-30
TRANSPHORM JAPAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thereafter, even if the p-type GaN is dry etched and removed leaving a portion to form the gate electrode, the 2DEG cannot be regained because the p-type dopant diffuses into the electron transport layer
[0009] In addition, the electron supply layer in the lower part of p-type GaN suffers etching damage due to dry etching performed on p-type GaN
This damage increases the resistance of the electron supply layer, making it more difficult to regain the 2DEG

Method used

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  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof

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no. 1 approach

[0026] The present embodiment discloses a Schottky-type AlGaN / GaN HEMT as a compound semiconductor device.

[0027] 1 to 4 are schematic cross-sectional views showing a method for manufacturing a Schottky-type AlGaN / GaN HEMT according to a first embodiment in order of steps.

[0028] First, if Figure 1A As shown in , a stacked compound semiconductor structure 2 is formed on, for example, a semi-insulating SiC substrate 1 used as a substrate for growth. As for the substrate used for the growth, a sapphire substrate, a GaAs substrate, a Si substrate, a GaN substrate, or the like may be used instead of the SiC substrate. Furthermore, the conductivity of the substrate can be of any type, either semi-insulating or conductive.

[0029] The laminated compound semiconductor structure 2 includes a nucleation layer 2a, an electron transport layer 2b, an intermediate layer (spacer layer) 2c, an electron supply layer 2d, and a capping layer 2e.

[0030] Specifically, each compound sem...

no. 2 approach

[0064] The present embodiment discloses an MIS (Metal Insulator Semiconductor) type AlGaN / GaN HEMT as a compound semiconductor device.

[0065] Figure 5A and Figure 5B is a schematic cross-sectional view showing main steps of the method for manufacturing the MIS-type AlGaN / GaN HEMT according to the second embodiment. Note that the same elements and the like as those of the first embodiment are denoted by the same reference numerals, and will not be described in further detail here.

[0066] First, execute sequentially in the same manner as the first embodiment Figure 1A to Figure 2B A step of. Figure 2A The step of forming the Mg diffusion region 5 in the laminated compound semiconductor structure 2.

[0067] Next, if Figure 5A As shown, the protective film 4 is removed.

[0068] Specifically, a part of protective film 4 on laminated compound semiconductor structure 2 is removed by wet etching. The Mg diffusion region 5 and the MgO layer 3 a thereon remain in the s...

no. 3 approach

[0089] The present embodiment discloses a PFC (Power Factor Correction) circuit provided with one type of AlGaN / GaN HEMT selected from the AlGaN / GaN HEMTs in the first embodiment and the second embodiment.

[0090] Figure 8 is a connection circuit diagram showing a PFC circuit.

[0091] The PFC circuit 20 is provided with a switching element (transistor) 21 , a diode 22 , a choke coil 23 , a capacitor 24 , a capacitor 25 , a diode bridge 26 and an AC power source (AC) 27 . One type of AlGaN / GaN HEMT selected from the AlGaN / GaN HEMTs in the first embodiment and the second embodiment is applied to the switching element 21 .

[0092] In the PFC circuit 20 , the drain electrode of the switching element 21 is connected to the anode terminal of the diode 22 and one terminal of the choke coil 23 . The source electrode of the switching element 21 is connected to one terminal of the capacitor 24 and one terminal of the capacitor 25 . The other terminal of the capacitor 24 and the o...

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Abstract

The present invention provides a compound semiconductor device and a manufacturing method thereof. Specifically, an AlGan / GaN? A HEMT comprising a stacked compound semiconductor structure on a SiC substrate and a gate electrode formed on the stacked compound semiconductor structure, wherein in a lower region of the stacked compound semiconductor structure aligned with the gate electrode, p-type impurities (Mg) and oxygen (O) is localized to a depth at which part of the two-dimensional electron gas generated in the stacked compound semiconductor structure disappears.

Description

technical field [0001] Embodiments described herein relate to compound semiconductor devices and methods for manufacturing compound semiconductor devices. Background technique [0002] Research is currently underway to apply nitride semiconductors to high-output semiconductor devices that withstand high voltages by utilizing the characteristics of nitride semiconductors such as high saturation electron velocity, wide band gap, and the like. For example, the band gap of GaN, a nitride semiconductor, is 3.4 eV, which is higher than that of Si (1.1 eV) and GaAs (1.4 eV), and thus has a high breakdown field strength. Accordingly, GaN is highly expected to be used as a material for a semiconductor device for a power supply that can obtain high-voltage operation and high output. [0003] Many reports have been made on field effect transistors, particularly high electron mobility transistors (HEMTs), which are devices using nitride semiconductors. For example, an AlGaN / GaN HEMT u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/517H01L29/66462H01L29/7787H01L29/1066H01L29/2003H01L29/207H01L21/18H01L29/778H01L29/66431H02M3/335
Inventor 山田敦史
Owner TRANSPHORM JAPAN