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Laser diode device

A technology of laser diodes and assemblies, applied in the direction of lasers, laser components, semiconductor lasers, etc.

Active Publication Date: 2013-09-25
OSRAM OPTO SEMICONDUCTORS GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, no laser diode manufacturer continues to use this alternative TO housing for nitrogen-based laser diodes

Method used

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  • Laser diode device
  • Laser diode device
  • Laser diode device

Examples

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Embodiment Construction

[0051] In the exemplary embodiments and figures, identical, similar or identically acting elements can each be provided with the same reference signs. The illustrated elements and their relative size ratios are not considered to be to scale, but rather, for better clarity and / or for better understanding, the various elements, such as layers, components, devices and regions Can be shown exaggeratedly.

[0052] exist Figure 2A , 2B An embodiment for a laser diode device 100 is shown in Figure 2A A schematic cross-sectional view is shown in , and in Figure 2B The reverse of the laser diode device 100 is shown in the Figure 2A A top view of the front side in direction 110 is shown in . The following instructions also refer to Figure 2A and 2B .

[0053] The laser diode arrangement 100 has a housing 1 which is designed in the form of a so-called TO housing. The housing 1 has a housing part 10 and a mounting part 11 arranged on the housing part. The mounting part 11 is ...

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Abstract

The laser diode device has a housing (1) and a mounting element (11) that is connected to housing section (10) which is coated with steel. The mounting element is extended along an extension direction (110) that becomes far from the housing section (10). A laser diode chip (2) is provided on the mounting element on a substrate (20). The substrate is provided with semiconductor layers (21, 22, 23, 24) having active layer (23) for emitting light. The housing section (10) and the mounting element (11) are provided with base structure made of copper. A solder layer (3) with thickness of not less than 2 mu m is arranged between the chip (2) and mounting element (11). A crystalline protective layer (6) made of dielectric material is formed on radiation uncoupling surface (27) of the chip.

Description

technical field [0001] The present invention proposes a laser diode device. [0002] Said patent application claims priority from German patent application 102012102305.0, the disclosure of which is incorporated herein by reference. Background technique [0003] A light source with high optical power density is a key component for several applications. For example, laser diodes made of nitrogen-based semiconductor material systems have a high market potential for projection systems, especially such with a luminous flux of between 1000 lumens and 10000 lumens. [0004] Therefore, for such applications, assemblies with high output power and compact housings are necessary. For cost reasons and within the scope of standardization, the housing of the so-called TO structure series (TO: "Transistor Outline") is usually in the form of a TO metal housing ("TO metal can package"), for example in the known structure Forms in sizes TO38, TO56 and TO90, where the TO metal housing is s...

Claims

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Application Information

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IPC IPC(8): H01S5/022H01S5/024H01S5/028
CPCH01S5/02212H01S5/02469H01S5/02476H01S5/028H01S5/0282H01S5/32341H01S2301/176H01S5/0237
Inventor 艾尔弗雷德·莱尔森克·陶茨乌韦·施特劳斯克莱门斯·菲尔海利希
Owner OSRAM OPTO SEMICONDUCTORS GMBH
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