31results about How to "Protection interface" patented technology

It is provided a method a method for establishing a first secure and authorized connection between a smart card and a first device in a network, wherein the first device comprises a second secure connection to a second device, wherein the method comprises storing a first security data; transferring the first security data between the first device and the second device; providing the first security data at the first device; establishing a binding between the smart card and the first device via the first secure and authorized connection utilizing the first security data; authorizing the binding between the smart card and the first device; and sending a second security data from the smart card to the first device via the first secure and authorized connection whereas the second security data may be usable for authentication of the first device to the network.

A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer. After formation of the source / drain regions and gate spacers, silicon germanium alloy portions are removed from gate stacks. A dielectric layer is formed and patterned to cover an NFET gate electrode, while exposing a thin silicon portion for a PFET. Germanium is selectively deposited on semiconductor surfaces including the exposed silicon portion. The dielectric layer is removed and a metal layer is deposited and reacted with underlying semiconductor material to form a metal silicide for a gate electrode of the NFET, while forming a metal silicide-germanide alloy for a gate electrode of the PFET.

A protective shield for a toilet bowl having a toilet seat connected thereto is disclosed. The toilet has an upper edge on which said toilet seat rests. The upper edge of the toilet has an inside surface and an outside surface. The shield is in the form of a sheet having a top edge, a bottom edge, and a pair of side edges, a front surface and a rear surface. The sheet has at least one retaining means in proximity to the rear surface of said sheet for maintaining said sheet in position on said toilet. The bottom edge of said shield extends into the toilet without touching any of the water in the bowl and the top edge extends upwardly so that the area where the toilet seat is connected to the toilet bowl is protected by the shield.

The present invention discloses a method for making a shallow groove insolation structure. The method comprises the steps: a padding oxide layer is formed on a substrate; a cease layer is formed on the padding oxide layer; a shallow groove insolation structure pattern is formed on the cease layer; the cease layer and the padding oxide layer are previously etched by taking the shallow groove insolation structure pattern as a covering film to form a groove opening; arc processing is carried out for the groove opening in at least two steps, and polymers produced from used gas in all steps are orderly reduced; the groove opening after arc processing is primarily etched to form a groove; the groove is filled; and a shallow groove insolation structure is formed after flattening processing. The adoption of the method for making a shallow groove insolation structure can ensure that the side walls on the top of the groove in the junction of a dielectric layer and the silicon substrate are smooth. The electrical properties of devices, such as current leakage, etc are effectively improved.

A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) are formed by patterning of a gate dielectric layer, a thin silicon layer, and a silicon-germanium alloy layer. After formation of the source / drain regions and gate spacers, silicon germanium alloy portions are removed from gate stacks. A dielectric layer is formed and patterned to cover an NFET gate electrode, while exposing a thin silicon portion for a PFET. Germanium is selectively deposited on semiconductor surfaces including the exposed silicon portion. The dielectric layer is removed and a metal layer is deposited and reacted with underlying semiconductor material to form a metal silicide for a gate electrode of the NFET, while forming a metal silicide-germanide alloy for a gate electrode of the PFET.

The invention is a method for making a double-layer grid dielectric layer, firstly providing a semiconductor substrate and forming a silicon dioxide film on the semiconductor substrate, successively forming a noncrystalline silicon film on the silicon dioxide film and making a low-temperature plasma nitrogenization process to form the noncrystalline silicon film into a nitrogenous noncrystalline silicon film, and finally making an oxygen gas annealing process to make the oxygen gas react with the nitrogenous noncrystalline silicon film so as to form a nitrogen-enriched silicon oxynitride layer.

The invention provides a method for modifying the surface of a lithium cobalt oxide positive electrode material by a phosphorus-containing compound and the lithium cobalt oxide positive electrode material, and the method comprises the following steps: 1, by taking a lithium cobalt oxide powder material with a layered structure as a matrix, carrying out ball-milling mixing on the lithium cobalt oxide powder material and the phosphorus-containing compound according to a certain proportion to obtain a mixed powder material; 2, in an atmosphere protection environment, heating the mixed powder material to obtain the modified lithium cobalt oxide positive electrode material, wherein the interior of which is lithium cobalt oxide, the near surface of which comprises lithium cobalt oxide crystal lattices and phosphate radical bonds and the surface of which comprises an amorphous coating layer composed of metal ions and phosphate radical groups. According to the preparation method, a phosphorus-containing compound and lithium cobalt oxide are mixed and heated for process control and treatment, so the surfaces of lithium cobalt oxide particles are modified, and the stability of a lithium cobalt oxide structure is enhanced by doping phosphate radicals in surface crystal lattices; and the amorphous coating layer effectively protects the electrode electrolyte interface, reduces the interfaceside reaction, and improves the rate capability and the cycle performance.

The present invention provides a method for protecting a character entered at a graphical interface. The method comprises the steps of: generating a set of images that form a complete image of a keypad having a button-to-character assignment; displaying the graphical keypad using said image set; and, obtaining the character of a selected button using the button-to-character assignment. The inventive method can be repeated with a different button-to-character assignment in each repetition to obtain a sequence of characters. In consequence of the inventive method, the entered character is protected as monitoring software can capture merely unreadable portions of the complete keypad image. In furtherance of this purpose, the present invention also provides a method for generating a set of images from a complete image of a character belonging to a character set.

A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.

The invention relates to a preparation method and application of a composite coated ternary positive electrode material, and belongs to the field of battery materials. The invention provides the preparation method of the composite coated ternary positive electrode material. An oxide and a fast ion conductor are coated step by step in a solid phase, so that the occurrence of structure change and side reaction in the cycle process of the positive electrode material are solved, the cycle and safety performance of the material is improved, and meanwhile, the problem of poor conductivity of the positive electrode material is also improved.

A method for fabricating interconnections with carbon nanotubes of the present invention comprises the following steps: forming a dual-layer that contains a catalytic layer and an upper covering layer on the periphery of a hole connecting with a substrate; and growing carbon nanotubes on the catalytic layer with the upper covering layer covering the carbon nanotubes. The present invention grows the carbon nanotubes between the catalytic layer and the upper covering layer. The upper covering layer protects the catalytic layer from being oxidized and thus enhances the growth of the carbon nanotubes. The carbon nanotubes are respectively connected with the lower substrate and an upper conductive wire via the catalytic layer and the upper covering layer, which results in a lower contact resistance. Moreover, the upper covering layer also functions as a metal-diffusion barrier layer to prevent metal from spreading to other materials via diffusion or other approaches.

A method is described herein which enables a mobile device and a smart card (SIM, UICC) to establish a shared secret KE which can then be used to secure an interface between themselves. A mobile operator helps in the establishment of the shared secret (KE) by taking part in a key exchange between the mobile device and smart card. The mobile operator's involvement is desirable since they can keep track of mobile device-smart card pairs and if necessary they can block the security establishment between the mobile device and the smart card in order to prevent fraudulent behavior.

The present invention provides a method for protecting a character entered at a graphical interface. The method comprises the steps of: generating a set of images that form a complete image of a keypad having a button-to-character assignment; displaying the graphical keypad using said image set; and, obtaining the character of a selected button using the button-to-character assignment. The inventive method can be repeated with a different button-to-character assignment in each repetition to obtain a sequence of characters. In consequence of the inventive method, the entered character is protected as monitoring software can capture merely unreadable portions of the complete keypad image. In furtherance of this purpose, the present invention also provides a method for generating a set of images from a complete image of a character belonging to a character set.

Semiconductor device identification using quantum dot technology. A semiconductor nanocrystal based target is fabricated. A guard ring superjacent the fluorescing surface of the nanocrystal surface is provided to ensure repeatability of spectral mapping and analysis data. A transparent cap on the target may enhance performance. A system for coding a semiconductor device is described. A method is described for fabricating quantum dot targets in a methodology compatible with subsequent semiconductor fabrication process steps.

The invention provides an electrolyte capable of improving quick charge capacity of a lithium ion battery and a lithium ion battery obtained from the electrolyte. The electrolyte comprises an organicsolvent, lithium salt and additives, wherein the additives comprise DCKVEA and a sulfocompound. The electrolyte provided by the invention increases the film-forming property of the electrolyte under high voltage, stable passive films can be formed at both the positive electrode and negative electrode, the film-forming impedance is low, the thickness is small, meanwhile, the deposition of metal impurities in the negative electrode is reduced, the positive electrode and negative electrode interfaces are protected, so that the prepared lithium ion battery has lower temperature rise under the condition of large multiplying power charging.

The invention discloses a silicon carbide junction barrier schottky diode and a preparation method thereof. The silicon carbide junction barrier schottky diode comprises a cathode electrode, a siliconcarbide substrate, a first drift layer and a second drift layer which are arranged in turn from the bottom to the top and first field limiting rings, second field limiting rings, a passivation layerand an anode electrode. The depth of the first field limiting rings is less than that of the first drift layer and the first field limiting rings are distributed in the first drift layer in a spaced way and leveled with the upper surface of the first drift layer. The width of the second field limiting rings is less than that of the first field limiting rings and the depth is the same as that of the second drift layer and the second field limiting rings are distributed in the second drift layer in a spaced way. The first field limiting rings and the second field limiting rings are identical innumber and correspondingly in the inverted T-shape or n L-shape distribution. The anode electrode is located on the main junction, and the passivation layer is located on both sides of the anode electrode. The breakdown voltage of the schottky diode is increased and the difficulty of the preparation process is reduced.

The invention discloses a multi-signal source HDMI (High Definition Multimedia Interface) display switching device and relates to the field of a display device. The multi-signal source HDMI display switching device comprises an HDMI display, at least one signal input source and a channel control device. The channel control device comprises a switching turntable, and a switching button, a separablecontact head which are set at one side of the switching turntable. The channel control device also comprises an input port, a converter, an output channel and an output port. Through adoption of an electromechanical combination thought, signals are freely switched by carrying out pressing and rotating operations on the switching button; the multi-signal source HDMI display switching device is characterized by high compatibility and is friendly to different interfaces of new and old signal input devices; the interface of the HDMI display is protected, the problem of bad signal contact resulting from frequent plug is avoided, and the service life of the HDMI display is prolonged; and through setting of a connection switching device, the multi-signal source HDMI display switching is realized, and the multi-signal source HDMI display switching device is convenient for use and reliable in connection.

The present disclosure generally relates to durable solar mirror films, methods of making durable solar mirror films, and constructions including durable solar mirror films. In some embodiments, the present disclosure relates to a solar mirror film comprising: a weatherable layer having a first major surface and a second major surface; regions of reflective material adjacent to the first major surface of the weatherable layer; and regions of the first major surface of the weatherable layer substantially lacking reflective material. In some embodiments, the present disclosure relates to a weatherable layer having a first major surface and a second major surface; wherein the first major surface includes a bulk region and an edge region; and a reflective material adjacent to the bulk region of the first major surface of the weatherable layer and substantially absent from the edge region.

The invention discloses a storage type interface for a computer hardware mainboard, in particular to the field of computer hardware. The storage type interface comprises a computer body, a support, arotating shaft, a torsion spring, a slot, a buffer slot, a buckle fastener and a storage joint, a case right cavity is formed in the side face of an inner cavity of the computer body, a control box isfixedly installed at the bottom in the case right cavity, and a control rod is welded to the top of the side face of the control box. According to the invention, the adsorption device is arranged; the interface structure is changed, so that the interface can be prevented from being exposed outside for a long time; however, when the interface is used, the interface is always exposed outside for aperiod of time. In this way, a large amount of dust can still be accumulated in the interface for a long time, the adsorption device adsorbs the dust in the interface regularly at the moment, the problem that a large amount of dust is accumulated in the interface is avoided, the problem that the interface influences data transmission is solved, and therefore cleanliness of the interior of the interface is guaranteed, and meanwhile data transmission is rapid.

The invention provides a method for modifying the surface of a lithium cobaltate positive electrode material with a phosphorus-containing compound and the lithium cobaltate positive electrode material, comprising the following steps: step 1, using a layered lithium cobaltate powder material as a matrix, and Compounds are ball milled and mixed according to a certain ratio to obtain a mixed powder material; step 2, heat the mixed powder material in an atmosphere protection environment to obtain a modified lithium cobaltate positive electrode material, the interior of which is lithium cobaltate, and the near surface Including lithium cobalt oxide lattice and phosphate root to form a bond, the surface includes an amorphous coating layer composed of metal ions and phosphate groups. The invention adopts process control and treatment of mixing and heating the phosphorus-containing compound and lithium cobaltate to modify the surface of lithium cobaltate particles, and utilizes the doping of phosphate on the surface lattice to enhance the stability of lithium cobaltate structure ; and effectively protect the electrode electrolyte interface by containing an amorphous coating layer, reduce interface side reactions, and improve rate performance and cycle performance.

According to the multi-stage charge-discharge container formation process for the lead-acid battery provided by the invention, small-current formation charging is performed on the battery subjected to acid injection, so that active substances on positive and negative plates in the battery and a grid interface are prevented from being damaged, the active substances are fully converted, the structure is stable, the consistency of a battery pack is improved, and the cycle life of the battery pack is prolonged; moreover, according to the process, the standing time of the battery is strictly controlled, so that the reaction heat of active substances and sulfuric acid accumulated in the battery is relatively less, then the battery is charged by adopting low current, and the battery is placed in a water bath cooling environment, so that the temperature in the battery is effectively controlled; and the hydration decomposition of lignin in the negative electrode active material is effectively avoided, so that the low-temperature discharge property of the battery is also guaranteed.

The invention relates to a chip cleaning container on a semiconductor lapping plate, and a use method thereof, and belongs to the technical field of the semiconductor chip interface cleaning treatment. The device comprises a container body with a handle, neck units and movable carrier tables; symmetric neck units in a certain cycle repetition are arranged in the container body, one carrier table is arranged in each neck unit, and a lapping plate with a ship is placed on each carrier table board; two sides of each carrier table are located in the neck unit; two sides of the carrier table move downwards along the space of the neck unit on an inner wall of the container body; one end of the outside of the carrier table is propped against the bottom of each neck unit, and the carrier tables and the lapping plates are commonly immersed into a holding cavity of the container body. The chip cleaning container not only provides lapping plates and a chip interface cleaning / corrosion process treatment container on the plate, but also provides a loading device of the lapping plate, and the cleaning corrosion treatment of the interface is guaranteed when the production efficiency is improved.

The invention provides a semiconductor process method and in particular relates to a method for protecting an epitaxial growth interface in a selection region. The method comprises the following steps: providing a substrate with the need of epitaxial growth, partially covering a photoresist protective layer on the substrate, and further depositing a dielectric layer on the photoresist protective layer to serve as a mask layer; removing the photoresist protective layer and the dielectric layer on the photoresist protective layer by adopting a photoresist lift off process, and patterning the mask layer; and finally, performing epitaxial growth on an area which is not masked. The process is simple, and the problem that the growth interface is easily damaged in the process of manufacturing the mask layer in the traditional photoetching and eroding method can be well solved.

The laser diode device has a housing (1) and a mounting element (11) that is connected to housing section (10) which is coated with steel. The mounting element is extended along an extension direction (110) that becomes far from the housing section (10). A laser diode chip (2) is provided on the mounting element on a substrate (20). The substrate is provided with semiconductor layers (21, 22, 23, 24) having active layer (23) for emitting light. The housing section (10) and the mounting element (11) are provided with base structure made of copper. A solder layer (3) with thickness of not less than 2 mu m is arranged between the chip (2) and mounting element (11). A crystalline protective layer (6) made of dielectric material is formed on radiation uncoupling surface (27) of the chip.

The laser diode device (100) has mounting element (11) that is connected to housing section (10) which is coated with steel. A laser diode chip (2) is provided on the mounting element on a substrate. The substrate is provided with semiconductor layers having active layer for emitting light. The mounting element is provided with base structure made of copper. A solder layer (3) with thickness of not less than 2 mu m is arranged between the chip and mounting element. A crystalline protective layer made of dielectric material is formed on radiation uncoupling surface of the chip.

The invention discloses a display switching device based on multipath HDMI sources, and relates to the field of display devices. The display switching device comprises an HDMI display and at least onesignal input source, wherein the display switching device further comprises a channel controller, the channel controller comprises a plurality of switching requests for receiving and displaying, theswitching requests use piezoelectric signal or infrared signals as transmission carriers, and the channel controller is used for connecting a selected video input interface and the HDMI display according to the switching requests. The display switching device disclosed by the invention has the characteristics of simple operation, high compatibility and friendliness to different interfaces of new and old signal input devices, meanwhile, the channel controller is deployed to separate the signal input source from the interface of the HDMI display, thereby protecting the interface of the HDMI display, avoiding the problems caused by frequent plugging and unplugging such as poor signal contact or the like, and prolonging the service life of the HDMI display; short-distance wireless control is realized by means of an infrared remote control mode; and the situation of channel conduction is visually displayed in a digital display mode.

The embodiment of the invention provides an interface protection device, a mobile terminal and a method. A coil is arranged at an interface of the mobile terminal, and is connected to a processor of the mobile terminal. The processor is used for detecting voltage of two ends of the coil, judging, according to the voltage, whether peripheral equipment accesses the interface of the mobile terminal,and controlling powering-on of the interface when access of the peripheral equipment is determined. The embodiment of the invention can solve the problem that interfaces are corroded by water ingressand thus lose efficacy.

The present disclosure generally relates to durable solar mirror films, methods of making durable solar mirror films, and constructions including durable solar mirror films. In one embodiment, the present disclosure relates to a solar mirror film comprising: a multilayer optical film layer including having a coefficient of hygroscopic expansion of less than about 30 ppm per percent relative humidity; and a reflective layer having a coefficient of hygroscopic expansion.