Method for making double layer grid dielectric layer

Abstract

The invention is a method for making a double-layer grid dielectric layer, firstly providing a semiconductor substrate and forming a silicon dioxide film on the semiconductor substrate, successively forming a noncrystalline silicon film on the silicon dioxide film and making a low-temperature plasma nitrogenization process to form the noncrystalline silicon film into a nitrogenous noncrystalline silicon film, and finally making an oxygen gas annealing process to make the oxygen gas react with the nitrogenous noncrystalline silicon film so as to form a nitrogen-enriched silicon oxynitride layer.

Description

technical field [0001] The invention relates to a method for manufacturing a double-layer grid dielectric layer, in particular to a method for manufacturing a double-layer grid dielectric layer composed of a silicon dioxide film and a nitrogen-rich nitrogen oxide silicon layer. Background technique [0002] With the rapid development of semiconductor technology, the line width of the semiconductor process is also continuously reduced. According to the current technology, the gate width has progressed to 70nm, and the thickness of the gate oxide layer has also shrunk to about 1.5nm. As the thickness of the gate oxide layer decreases, the problem of gate leakage current also arises accordingly. Therefore, the current practice of using a silicon oxynitride layer with a high dielectric constant to replace the traditional silicon oxide as the gate dielectric layer, due to the same The equivalent oxide thickness (EOT) has a thicker thickness, which can avoid the generation of gate...

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Problems solved by technology

[0006] Therefore, the main purpose of the present invention is to provide a method for making a double-layer gate dielectric layer, so as to overcome the unsolvable problems in the prior art

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