A kind of punch-through transient voltage suppressor
A transient voltage suppression and punch-through technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device components, circuits, etc., can solve the problem of incomplete and effective protection of positive and negative electrostatic pulses, forward and reverse Large difference in clamping ability, poor ESD protection effect, etc., to achieve good application prospects, good ESD protection effect, and simple manufacturing method
Active Publication Date: 2016-04-27
HAINING BERNSTEIN BIOTECH CO LTD
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Problems solved by technology
[0008] The technical problem solved by the present invention is to overcome that the current transient voltage suppressors on the market have low voltage clamping ability, large difference between forward and reverse clamping capabilities, and cannot completely and effectively protect positive and negative voltages. Electrostatic pulse, ESD protection effect is not good, and the production process is special, the problem is expensive
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[0033] The present invention will be further described below in conjunction with the accompanying drawings of the specification.
[0034] Such as figure 1 As shown, a punch-through transient voltage suppressor includes a P substrate 01, and the doping concentration of the P substrate 01 is 1×10 15 ~1×10 16 atom / cm 3 In between, an oxide layer 02 is provided on the upper surface of the P substrate 01. The oxide layer 02 is divided into an anode area and a cathode area from the middle. The thickness of the oxide layer 02 is 0.8um~1.2um, and the oxide layer 02 is embedded in the P substrate. The depth inside the substrate 01 is 0.1um~0.3um;
[0035] The upper surface of the P substrate 01 is located in the anode region with an N well 03 with the second conductivity type, and the doping concentration of the N well 03 is 7×10 18 ~1×10 19 atom / cm 3 In between, the N well 03 is provided with a first N+ active injection region 05 of the second conductivity type;
[0036] The upper surface of...
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The invention discloses a breaking-through transient voltage inhibitor, which comprises a P substrate. The upper surface of the P substrate is equipped with an oxide layer, and the oxide layer is divided into an anode region and a cathode region by the middle portion; the upper surface of the P substrate is equipped with an N well in second conductive type in the anode region, and a first N+ active injection region in the second conductive type is arranged in the N well; the upper surface of the P substrate is equipped with a P well in a first conductive type in the cathode region, and a second N+ active injection region in the second conductive type is arranged in the P well; and the first N+ active injection region is equipped with an anode metal connecting sheet, and the second N+ active injection region is equipped with a cathode metal connecting sheet. The breaking-through transient voltage inhibitor of the invention has a proper trigger voltage and a high positive and negative clamping capability; can effectively protect positive and negative electro-static pulses; has good electro-static discharge protective effect; and is small in chip area, low in cost, easy to realize, and good in application prospects.
Description
Technical field [0001] The invention relates to a through-type transient voltage suppressor, belonging to the technical field of off-chip integrated circuit electrostatic protection. Background technique [0002] With the rapid development of the electronics industry, there are more and more fashionable consumer electronics and portable products. These electronic products often carry many interfaces and need to communicate with other electronic devices. The reliability design of these interfaces is seriously related to the service life of the entire electronic device. Among them, the ESD (Electrostatic Discharge) problem is related to these interfaces. The critical issue of reliability design. [0003] At present, as electronic devices are increasingly miniaturized, high-density and multi-functional, they are easily affected by electrostatic discharge. We know that static electricity exists everywhere at all times. In the 1960s, with the MOS which is very sensitive to static elect...
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IPC IPC(8): H01L23/60
Inventor 董树荣曾杰郭维钟雷
Owner HAINING BERNSTEIN BIOTECH CO LTD