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Hysteresis-effect-free silicon-controlled rectifier type ESD protection structure and implementation method thereof

A technology of ESD protection and silicon-controlled rectifiers, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as exceeding leakage performance, and achieve the effect of reducing leakage current

Pending Publication Date: 2020-01-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its leakage current is about 5nA / 30um, which can meet the design requirements of general IO circuits, but exceeds the leakage performance of traditional GGNMOS, so it is hoped that its leakage performance can be further improved

Method used

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  • Hysteresis-effect-free silicon-controlled rectifier type ESD protection structure and implementation method thereof
  • Hysteresis-effect-free silicon-controlled rectifier type ESD protection structure and implementation method thereof
  • Hysteresis-effect-free silicon-controlled rectifier type ESD protection structure and implementation method thereof

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Embodiment Construction

[0030] The implementation of the present invention is described below through specific examples and in conjunction with the accompanying drawings, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific examples, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] image 3 It is a circuit structure diagram of a preferred embodiment of a silicon-controlled rectifier type ESD protection structure without hysteresis effect in the present invention. Such as image 3 As shown, the present invention discloses a silicon-controlled rectifier type ESD protection structure without hysteresis effect, including a plurality of shallow trench isolation lay...

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Abstract

The invention discloses a hysteresis-effect-free silicon-controlled rectifier type ESD protection structure and an implementation method thereof. The structure comprises a semiconductor substrate (80), an N well (60) and a P well (70) generated on the semiconductor substrate, high-concentration P-type doping (20) and high-concentration N-type doping (28) arranged at the upper part of the N well (60), high-concentration N-type doping (24) and high-concentration P-type doping (26) arranged at the upper part of the P well (70), high-concentration P-type doping (22) arranged at the upper part of the boundary of the N well (60) and the P well (70), wherein the distance between the high-concentration P-type doping (20) and the high-concentration N-type doping (28) is a part of the N well (60) and is S, the distance between the high-concentration N-type doping (28) and the high-concentration P-type doping (22) is a part of the N well (60), and an N-type gate (32) is generated above the part of the N well (60).

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a novel silicon-controlled rectifier-type ESD protection structure without hysteresis effect and a realization method thereof. Background technique [0002] The anti-static protection design of high-voltage circuits has always been a technical problem, because the core of high-voltage circuits: high-voltage devices (such as LDMOS) are not suitable for anti-static protection design like ordinary low-voltage devices, because the hysteresis effect curve of high-voltage devices The exhibited characteristics are poor. [0003] In the field of anti-static protection design of high-voltage integrated circuits, the inventor of the present invention once proposed such figure 1 A silicon-controlled rectifier without hysteresis effect, the existing silicon-controlled rectifier without hysteresis effect includes a plurality of shallow trench isolation layers (STI, ...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/8249
CPCH01L27/0262H01L21/8249
Inventor 朱天志
Owner SHANGHAI HUALI MICROELECTRONICS CORP