Metallo-organic compound chemical vapor deposition method and device

Abstract

Disclosed are a chemical vapour deposition method for an organic metal compound and an apparatus therefor. The method comprises: providing a base and at least one substrate; providing a first gas inlet device and a second gas inlet device, the spraying direction of a first gas along a first gas outlet forming an included angle with the spraying direction of a second gas along a second gas outlet; depositing the first gas and the second gas on the surface of the substrate to obtain a layer of organic metal compound; the first gas being distributed in the reaction region in a concentration gradient, comprising an A region and a B region, with the average gas concentration in the A region being higher than that in the B region; the second gas being distributed in the reaction region in a concentration gradient, comprising a C region and a D region, with the average gas concentration in the C region being higher than that in the D region; the A regions and the C regions being arranged alternately; and the substrate passing through the A region and the C region in sequence. The present invention can not only avoid the premature reaction of the reactive gases, but also improve the reaction rate and reduce production costs.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a metal organic compound chemical vapor deposition method and a device thereof. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions, and the formation of solid substances is deposited on the surface of a heated solid substrate to obtain solid materials. It is realized by chemical vapor deposition equipment. . Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. In order to deposit the desired film, it is generally necessary to feed a variety of different reactive gases into the reaction chamber, and it is also necess...

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Problems solved by technology

[0012] But before the two reactant gases reach the epitaxial growth surface of the substrate, the group III metal-organic source must pass through the entire group V hydride source, and since the group V hydride source is an excess reactant, the group V hydride source molecules will prevent A lot of III-group metal-organic sources and carrier gases reach the substrate surface, which leads to the reaction of the two gases in advance, which ultimately reduces the use efficiency of III-group metal-organic sources, resulting in waste of materials, and the price of metal-organic source materials is very high. Expensive, which will inevitably result in an increase in production costs

It also reduces the deposition rate of the thin film

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