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Thin film transistor and method for fabricating the same

一种薄膜晶体管、栅绝缘膜的技术，应用在晶体管、半导体/固态器件制造、半导体器件等方向，达到高电子迁移率、良好输出饱和特性、工艺简单的效果

Active Publication Date: 2013-10-23
LG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0027] DETAILED DESCRIPTION OF THE INVENTION Aspects of the present invention are to solve problems arising in the prior art and to provide a thin film transistor capable of overcoming many problems generated during the manufacturing process and ensuring high current characteristics by changing the structure of the thin film transistor and a manufacturing method thereof

Method used

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  • Thin film transistor and method for fabricating the same
  • Thin film transistor and method for fabricating the same
  • Thin film transistor and method for fabricating the same

Examples

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Embodiment Construction

[0048] Hereinafter, the thin film transistor structure of the present invention will be described with reference to the accompanying drawings.

[0049] Image 6 is a plan view of the thin film transistor of the present invention.

[0050] Figure 7 is a cross-sectional view of the thin film transistor structure of the present invention along line VII-VII.

[0051] Such as Image 6 with Figure 7 As shown, the thin film transistor according to the present invention includes: a gate electrode 103, patterned on a substrate 101 to have a given width and length, and including a vertical electrode portion 103B and a plurality of horizontal electrode portions 103A separated by fixed intervals a gate insulating film 107 formed over the entire surface of the substrate 101 including the gate electrode 103; an active pattern 109a formed into a given shape over the plurality of horizontal electrode portions 103A on the gate insulating film 107; an etching stopper film pattern 113A, f...

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Abstract

A thin film transistor and a method for fabricating the same are disclosed. The thin film transistor includes: a gate electrode formed on a substrate and having a plurality of horizontal electrode parts spaced apart at regular intervals; a gate insulating film formed over the entire surface of the substrate including the gate electrode; an active pattern formed on the gate insulating film above the plurality of horizontal electrode parts; an etch stop film pattern formed above the active pattern and the gate insulating film so as to overlap top portions of the active pattern and the gate electrode and; a source electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of adjacent horizontal electrode parts; and a drain electrode formed on the active pattern, the gate insulating film, and the etch stop film pattern so as to overlap top portions of horizontal electrode parts located on the outermost ends.

Description

technical field [0001] The present invention relates to a thin film transistor (hereinafter, referred to as TFT), and more particularly, to a thin film transistor that can be suitably used as a semiconductor device as well as for a display device such as an organic light emitting diode (hereinafter referred to as OLED) and a liquid crystal transistor. A thin film transistor of a switching element or a driving element of a display device (hereinafter, referred to as LCD), and a manufacturing method thereof. Background technique [0002] Displays such as organic light emitting diodes (OLEDs) and liquid crystal displays (LCDs) may have thin film transistors (TFTs) as light switching elements or driving elements. [0003] Generally, amorphous silicon TFTs (a-Si TFTs) are used as driving and switching elements of displays. A conventional a-SiTFT is an element that can be relatively uniformly formed on a substrate having an area larger than about 2m×2m at a relatively low cost, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/423
CPCH01L29/66969H01L27/0705H01L29/78669H01L29/7869H01L29/6675H01L29/78678H01L29/78645H01L29/41733H01L29/42384
Inventor 曺基述朴美景崔栽荣
Owner LG DISPLAY CO LTD
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