Low-power overcurrent overvoltage protection integrated circuit chip
An over-current and over-voltage protection, integrated circuit technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of large over-voltage and over-current protection circuits, high cost performance, reducing the size of protection circuits, etc., to save manufacturing. Cost, cost-effective, thin precision effect
Inactive Publication Date: 2013-10-30
扬州江新电子有限公司
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Problems solved by technology
[0006] The purpose of the present invention is to solve the problem of large volume of the overvoltage and overcurrent protection circuit in the prior art, and provide a low power consumption overcurrent and overvoltage protection integrated circuit chip, which greatly reduces the volume of the protection circuit and saves Manufacturing cost, cost-effective
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[0014] Such as figure 1 A low-power over-current and over-voltage protection integrated circuit chip shown includes two N+-type regions on the lower surface of the N-type silicon chip where phosphorus is diffused, and two P-type regions on the upper surface of the N-type silicon chip that are diffused by boron. There is also a P-type region diffused by boron between the two N+-type regions on the lower surface of the N-type silicon wafer, and an N+ region is diffused by phosphorus in each of the two P-type regions on the upper surface of the N-type silicon wafer. The two N+-type regions on the lower surface of the N-type silicon wafer are a large N+-type region and a small N+-type region with different areas, and the P-type region between the two N+-type regions is close to the small N+-type region. Diffusion, the two P-type regions on the upper surface of the N-type silicon wafer are a large P-type region and a small P-type region with different areas.
[0015] Such as fig...
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The invention discloses a low-power overcurrent overvoltage protection integrated circuit chip in the circuit chip field, comprising two N+ type areas performing phosphorus diffusion on the lower surface of an N type silicon wafer; the upper surface of the N type silicon wafer is provided with two P type areas by boron diffusion; a P type area by boron diffusion is arranged between the two N+ type areas on the lower surface of the N type silicon wafer; the two P type areas on the upper surface of the N type silicon wafer are respectively provided with an N type area by phosphorus diffusion. The chip integrates overcurrent overvoltage protection functions of a fuse and a rheostat, substantially reduces a size of a protection circuit, reduces manufacture cost, has high cost performance and can be used for circuit overvoltage and overcurrent protection.
Description
technical field [0001] The invention relates to a circuit chip, in particular to an overvoltage and overcurrent protection chip. Background technique [0002] Today's society enjoys the many conveniences and benefits of a multitude of modern electronic devices that are found in industrial, commercial and consumer fields. However, electronic equipment contains circuits or components that are sensitive to a certain amount of current or voltage. A surge or an over-normal level of current or voltage in an electronic device is generally considered to be an over-current or over-voltage condition. Occurrence of over-current conditions or over-voltage conditions can result in damage or destruction of circuits or components in electronic devices. As a result, designers often resort to fuses, varistors, thyristors, or other devices to protect circuits from overload conditions. [0003] A fuse is a well-known device commonly used for overcurrent protection in electrical circuits. M...
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IPC IPC(8): H01L27/02
Inventor 高潮黄素娟
Owner 扬州江新电子有限公司