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A U-shaped surrounding gate tunneling transistor device and its manufacturing method

A tunneling transistor, U-shaped technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limiting the wide application of TFET devices, small driving current of TFET devices, and reducing circuit size chips. Overlapping area, increased area, effect of small off current

Inactive Publication Date: 2018-04-27
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The TFET device is a transistor with very small leakage current, which can further reduce the size of the circuit and greatly reduce the power consumption of the chip. It has a very good application prospect in small-sized devices, but the TFET device has a bottleneck of small driving current. Limits the wide application of TFET devices

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  • A U-shaped surrounding gate tunneling transistor device and its manufacturing method
  • A U-shaped surrounding gate tunneling transistor device and its manufacturing method
  • A U-shaped surrounding gate tunneling transistor device and its manufacturing method

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Embodiment Construction

[0032] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the figure, for convenience of description, the sizes of different layers and regions are enlarged or reduced, and the sizes shown do not represent actual sizes, nor do they reflect the proportional relationship of the sizes. The referenced figures are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be construed as limited to the particular shapes of regions illustrated in the figures but are to include resulting shapes, such as manufacturing-induced deviations. For example, the curves obtained by etching are usually curved or rounded, but in the embodiment of the present invention, they are all represented by rectangles. The representation in the figure is schematic, but this should not be considered as limiting the scope of the present invention. Although these fi...

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Abstract

The invention belongs to the technical field of semiconductor devices below 20 nanometers, and in particular relates to a tunneling transistor device and a manufacturing method thereof. The U-shaped gate-enclosed tunneling transistor device of the present invention combines a multi-gate structure with a U-shaped trench structure, so that the gate electrode wraps the current channel in three directions, so that a smaller turn-off current can be obtained, and at the same time , so that the gate electrode surrounds the source region, which increases the overlapping area of ​​the source region and the gate electrode, thereby increasing the area of ​​linear tunneling, so that a larger turn-on current can be obtained. Furthermore, the present invention improves the original FinFET process to adapt to the formation of U-shaped trenches, so that U-shaped gate-enclosed tunneling transistor devices can be more widely used.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a tunneling transistor device and a manufacturing method thereof. Background technique [0002] In recent years, microelectronics technology with silicon integrated circuits as the core has developed rapidly. The development of integrated circuit chips basically follows Moore's law, that is, the integration level of semiconductor chips doubles every 18 months. However, as the integration of semiconductor chips continues to increase, the channel length of MOS (metal-oxide-semiconductor) transistors is also continuously shortened. When the channel length of MOS transistors becomes very short, the short channel effect will make The performance of the semiconductor chip is degraded, and it may not even work properly. [0003] One of the solutions to the above problems is to adopt a tunneling field effect transistor (TFET) structure. The TFET device is essen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 王玮张春敏王鹏飞孙清清张卫
Owner FUDAN UNIV