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Capacitor structure and its manufacturing method

A manufacturing method and capacitor technology, applied in the direction of electrical solid devices, semiconductor/solid device manufacturing, circuits, etc., can solve the problems that cannot meet the requirements of product design, achieve the effect of increasing the capacitance per unit area and saving the overall area

Active Publication Date: 2017-06-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the capacitance of existing capacitors can no longer meet the requirements of product design

Method used

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  • Capacitor structure and its manufacturing method
  • Capacitor structure and its manufacturing method
  • Capacitor structure and its manufacturing method

Examples

Experimental program
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Embodiment 1

[0044] Please refer to figure 2 , Figure 3a-3e as well as Figure 4a~4c , this embodiment proposes a method for manufacturing a metal-polysilicon-polysilicon (metal-poly-poly, M-PIP) capacitor, including:

[0045] Step S100: providing a semiconductor substrate 310, on which a shallow trench isolation layer 320 is disposed; wherein, the semiconductor substrate 310 is a silicon substrate, and the shallow trench isolation layer 320 is silicon dioxide ,Such as Figure 3a shown;

[0046] Step S200: sequentially forming the first dielectric layer 330 and the first polysilicon layer 340 on the shallow trench isolation layer 320, and then etching the first polysilicon layer 340 and the first dielectric layer 330 to expose The shallow trench isolation layer 320 and the semiconductor substrate 310, such as Figure 3a and Figure 4a shown;

[0047]Step S300: sequentially forming a second dielectric layer 350 and a second polysilicon layer 360 on the shallow trench isolation laye...

Embodiment 2

[0059] Please refer to figure 2 And 5a-5e, this embodiment proposes a method for manufacturing a metal-poly-poly-substrate (M-PPS) capacitor, including:

[0060] Step S100: providing a semiconductor substrate 410, on which a plurality of shallow trench isolation layers 420 are provided; wherein, the semiconductor substrate 410 is a silicon substrate, and the shallow trench isolation layers 420 are two Silicon oxide, such as Figure 5a shown;

[0061] Step S200: sequentially forming a first dielectric layer 430 and a first polysilicon layer 440 on the semiconductor substrate 410 between the two shallow trench isolation layers 420, and then etching the first polysilicon layer 440 and the The first dielectric layer 430 exposes the semiconductor substrate 410 and the shallow trench isolation layer 420, such as Figure 5a shown; wherein, the material of the first dielectric layer 430 is silicon dioxide or silicon nitride;

[0062] Step S300: sequentially forming a second diele...

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Abstract

The present invention proposes a capacitor structure and its manufacturing method. A fourth dielectric layer is formed on the basis of the existing capacitor, and the fourth dielectric layer is etched to form a trench, and the trench is filled with metal objects. The first polycrystalline The silicon layer serves as the first pole plate, the second polysilicon layer serves as the second pole plate, the metal object in the groove serves as the third pole plate, the second dielectric layer and the fourth dielectric layer serve as the dielectric layer between the pole plates, Therefore, without increasing the capacitance area of ​​the capacitor, the capacitance per unit area of ​​the capacitor is increased, and the overall area of ​​the semiconductor chip is saved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a capacitor structure and a manufacturing method thereof. Background technique [0002] In semiconductor integrated circuits, capacitors include PIP (Poly-Insulator-Poly, polysilicon-insulator-polysilicon) capacitors and PPS (Poly-Poly-Substrate, polysilicon-polysilicon-substrate) capacitors. [0003] Among them, the PIP capacitor is a device widely used to prevent analog circuits from emitting noise and frequency modulation. Since the PIP capacitor has the lower and upper electrodes formed of polysilicon (the same material as the gate electrode of the logic circuit), the electrode of the PIP capacitor can be formed together with the gate electrode without a separate forming process. The PPS capacitor also has lower and upper electrodes formed of polysilicon (the same material as the gate electrode of the logic circuit), and the electrodes of the PPS capacitor can also be...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/522
Inventor 高超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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