Method for preparing thin film bulk acoustic resonator based on ferroelectric materials and resonator

A technology of thin-film bulk acoustic wave and ferroelectric materials, applied in the direction of electrical components, impedance networks, etc., can solve the problems of poor thickness uniformity, affecting the resonance frequency of thin-film bulk acoustic wave resonators, etc., and achieve the effect of highly consistent resonance frequency

Active Publication Date: 2013-12-04
张家港恩达通讯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] For this reason, the technical problem to be solved by the present invention is that the thickness uniformity of the thin film bulk acoustic resonator prepared in the prior art is poor, which affects the stability of the resonant frequency of the thin film bulk acoustic resonator, thereby proposing a kind of resonant frequency that does not depend on Thin Film Bulk Acoustic Resonator with Device Thickness

Method used

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  • Method for preparing thin film bulk acoustic resonator based on ferroelectric materials and resonator
  • Method for preparing thin film bulk acoustic resonator based on ferroelectric materials and resonator
  • Method for preparing thin film bulk acoustic resonator based on ferroelectric materials and resonator

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Embodiment 1

[0049] Such as figure 2 As shown, the present embodiment provides a method for preparing a thin-film bulk acoustic resonator based on ferroelectric materials, including the following steps:

[0050] S1: select the substrate substrate to obtain the substrate layer 1;

[0051] S2: preparing a ring-shaped first electrode 2, a ferroelectric material layer 3, and a second electrode 4 on the substrate layer 1;

[0052] S3: At the position below the first electrode 2 on the substrate layer 1, the base material of the substrate is etched away to form an air cavity 5, and the area of ​​the air cavity 5 is larger than that of the first electrode 2 laterally. The area enclosed by the outer boundary.

[0053] After the step S3 is completed, an air cavity 5 is formed under the second electrode 2, and when the air cavity 5 is formed by etching, two or more fixing feet 7 will be reserved for the first Electrode 2 is fixed. The position and quantity of the fixing feet 7 have been set whe...

Embodiment 2

[0069] This embodiment provides a thin film bulk acoustic resonator based on ferroelectric materials, such as Figure 3a As shown, it includes a substrate layer 1 and a first electrode 2, a ferroelectric material layer 3 and a second electrode 4 arranged in a ring structure away from the substrate layer 1; the substrate layer 1 is connected to the first electrode 2 An air cavity 5 is provided at the opposite position, and the area of ​​the air cavity 5 in the lateral direction is larger than the area enclosed by the outer boundary of the first electrode 2 .

[0070] combine Figure 3b to Figure 3d In this embodiment, the ring structure includes but not limited to a circular ring structure, a square ring structure, and a polygonal ring structure, and the first electrode 2 is fixed on the substrate layer 1 through two fixing feet 7 .

[0071] For the FBAR device provided in this embodiment, compared with the FBAR device in the prior art, the functional layer of the original cub...

Embodiment 3

[0091] This embodiment provides a filter and an oscillator using the thin film bulk acoustic resonator described in Embodiment 2. And a radio frequency module, including a duplexer or a multiplexer, the thin film bulk acoustic resonator in the duplexer or the multiplexer adopts the thin film bulk acoustic resonator described in Embodiment 2.

[0092] Among them, the filter realizes functions such as image elimination, parasitic filtering and channel selection in the wireless transceiver device. The filter made by FBAR device has the characteristics of high quality factor and easy realization of miniaturization. In order to improve frequency selectivity, more combinations of FBAR devices with resonators with different resonant frequencies are required. Currently, Image 6 The ladder structure shown.

[0093] There is a wide demand for low-jitter clocks and oscillators in wired and wireless communications. Oscillators based on FBAR devices have advantages in small size, high ...

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Abstract

The invention provides a method for preparing a thin film bulk acoustic resonator based on ferroelectric materials, the thin film bulk acoustic resonator based on the ferroelectric materials and a filter, an oscillator and a radio frequency module comprising the thin film bulk acoustic resonator. The resonator controls change of ferroelectric material stresses by utilizing the electrostriction effect of the ferroelectric materials in a manner of changing externally-added direct voltage, therefore, sound wave velocity can be controlled, however, resonant frequency is in direct proportion to the sound wave velocity, and consequently change of the resonant frequency can be controlled. When the externally-added voltage is zero, the stress is also zero, sound waves can not be generated, resonance can not happen, and therefore devices can be started and stopped by applying the direct voltage or not. According to the scheme, the resonator can be started and stopped and frequency can be adjusted through externally adding of voltage in a simple mode under the condition that an externally-added switch is not needed. A switching filter bank based on the resonator neither needs any externally-added switch nor has insertion loss from the switch or a bias voltage network, and therefore sizes and manufacturing cost of the devices are greatly reduced.

Description

technical field [0001] The invention relates to the technical field of wireless communication devices. Specifically, it relates to a preparation method of a thin film bulk acoustic resonator based on a ferroelectric material, a thin film bulk acoustic resonator based on a ferroelectric material and a filter, an oscillator and a radio frequency module including the thin film bulk acoustic resonator. Background technique [0002] With the development of thin film and micro-nano manufacturing technology, electronic devices are developing rapidly in the direction of miniaturization, high-density multiplexing, high frequency and low power consumption. The film bulk acoustic resonator (FBAR: FilmBulkAcousticResonator) developed in recent years adopts an advanced resonance technology, which converts electrical energy into sound waves through the inverse piezoelectric effect of piezoelectric films to form resonance. FBAR devices have the characteristics of small size, low cost, hig...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/17
Inventor 朱欣恩
Owner 张家港恩达通讯科技有限公司
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