Integrated spray head for vapor deposition

Abstract

The invention discloses an integrated spray head for vapor deposition. The integrated spray head comprises a spray head body, at least one first gas main pipeline, at least one second gas main pipeline, a plurality of first gas outlet holes and a plurality of second gas outlet holes, wherein the spray head body is of a block-like body and comprises a bottom part and a side part around the periphery of the bottom part; the first gas main pipeline is open at the side part; the second gas main pipeline is also open at the side part and mutually isolated from the first gas main pipeline; the plurality of first gas outlet holes are communicated with the first gas main pipeline and positioned at the bottom part; the plurality of second gas outlet holes are communicated with the second gas main pipeline and also positioned at the bottom part, and the second gas outlet holes and the first gas outlet holes are mutually arranged at intervals; the first gas main pipeline, the second gas main pipeline, the first gas outlet holes and the second gas outlet holes are formed by drilling on the spray head body. The spray head disclosed by the invention has the advantages of simple structure, low manufacturing cost, reliable quality and very high economic value.

Description

technical field [0001] The invention relates to the field of vapor deposition, in particular to an integrated shower head for vapor deposition. Background technique [0002] Metal-organic chemical vapor deposition (MOCVD, Metal-organic Chemical Vapor Deposition) is a method for growing semiconductor thin films on substrates. [0003] When MOCVD grows a thin film, when the carrier gas (Carrier gas) is mainly passed through the container of the organic metal reaction source, the saturated vapor of the reaction source is brought into the reaction chamber to mix with other reaction gases, and then a chemical reaction occurs on the heated substrate promotes the growth of the film. Generally speaking, the carrier gas is usually hydrogen, but nitrogen is also used in some special cases (for example: when growing indium gallium nitride (InGaN) thin films). Commonly used substrates are gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP), silicon (Si), silicon c...

AI Technical Summary

Problems solved by technology

As a result, the yield of the sprinkler head is very low, the production rate will be greatly reduced, and the service life of the equipment is also very short.

[0012] The manufacturing method of the existing sprinkler head and the sprinkler head made of materials (mainly stainless steel) are very complicated, the manufacturing speed is also very low, and the manufacturing cost is very expensive, so that the overall price of the equipment remains high , but also need to invest a lot of labor costs

increase the production price of the machine

[0013] And the equipment made by other means also has the defects of slow production rate and short service life.

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