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A kind of power semiconductor device and its manufacturing method

A technology of power semiconductors and devices, which is applied in the field of electronics, can solve the problems of reduced device shutdown reliability, device burnout failure, dynamic avalanche effect, etc., and achieve the effects of improving reliability, reducing hole injection efficiency, and suppressing current concentration effect

Inactive Publication Date: 2016-06-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for large-area field-limiting rings and field-plate composite terminal regions, a large number of holes injected from the anode cannot flow out through the floating field-limiting ring, but through the terminal equipotential ring at the junction of the terminal and the cell, so Concentration of current transport will be formed at the terminal equipotential loop
The concentration of current transport at the terminal equipotential ring will cause a rapid increase in local temperature, which will cause dynamic avalanche effect and thermal breakdown, resulting in device burnout and failure, and the shutdown reliability of the device will be greatly reduced

Method used

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  • A kind of power semiconductor device and its manufacturing method
  • A kind of power semiconductor device and its manufacturing method
  • A kind of power semiconductor device and its manufacturing method

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Embodiment Construction

[0040] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0041]The invention provides a terminal structure of a power semiconductor device, the structure of which is as follows figure 2 shown. Among them, 1 is the metal emitter, 2 is the gate, 3 is the metal collector, 4 is the n-type source region, 5 is the p-type body region, 6 is the p-type equipotential ring, 7 is the p-type field limiting ring, and 8 is the N-type stop ring, 9 is the n-drift region, 10 is the n-type buffer layer, 11 is the p-type collector region, 12 is the field plate, 13 is the field oxide layer, and the oxide layer 14 is in the n-type buffer layer 10 in the device terminal area and between the p-type collector region 11.

[0042] image 3 It is a structural diagram of another IGBT with a terminal structure of the present invention, and the oxide layer 14 has a certain distance from the edge of the device, which can further prevent the ox...

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Abstract

The invention relates to electronic technology, in particular to a conductance modulation power semiconductor device and a manufacturing method thereof. In the power semiconductor device of the present invention, an oxide layer is introduced between the device terminal n-type buffer layer and the p-type collector region, and the oxide layer completely isolates the terminal region n-type buffer layer from the p-type collector region, which can Significantly reduce the hole injection efficiency in the terminal region, suppress the current concentration effect at the terminal equipotential ring during the turn-off process, reduce the temperature near the equipotential ring, suppress the thermal breakdown and dynamic avalanche breakdown of the device terminal, and improve the device shutdown Break characteristics, improve reliability. The invention is particularly applicable to power semiconductor devices.

Description

technical field [0001] The invention relates to electronic technology, in particular to a conductance modulation power semiconductor device and a manufacturing method thereof. Background technique [0002] Power semiconductor devices have been widely used in the fields of power processing and power conversion. In the application of power semiconductor devices, the breakdown voltage is one of the most important characteristics of power semiconductor devices. In the actual device process, since impurities are also diffused laterally during vertical diffusion, the edge profile of the actually formed PN junction is curved, and there is a junction bending effect, and the electric field line will bend at the junction when working in reverse. Concentrated, so that the breakdown voltage of the actual PN junction is much smaller than that of the ideal parallel plane junction. In addition, there are a certain number of mobile ions and fixed charges in the oxide layer formed on the su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0653H01L29/66348H01L29/7397
Inventor 张金平顾鸿鸣单亚东邹有彪刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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