Warp correction device and warp correction method for semiconductor element substrate

Abstract

A warp correction device, provided with: an injection mechanism provided with a nozzle for performing injection processing; a suction table for suctioning and holding the semiconductor element substrate on the principal-surface side or the film-forming-surface side; a movement mechanism for moving the suction table so that the semiconductor element substrate moves relative to the injection region in which the nozzle injects the injection material; an injection processing chamber for housing the semiconductor element substrate held to the suction table, injection processing being performed in the injection processing chamber; a measurement mechanism for measuring the warp of the semiconductor element substrate; and a control device for performing a process for setting the injection processing conditions for the injection mechanism and / or a pass-fail determination for the semiconductor element substrate on which injection processing has been performed on the basis of the difference between the target warp amount and the warp amount measured by the measurement mechanism.

Description

technical field [0001] The present invention relates to a warp correcting device and a warp correcting method of a substrate for a semiconductor element for correcting warpage occurring in a substrate for a semiconductor element such as a sapphire substrate. Background technique [0002] Semiconductor elements such as light-emitting diodes are manufactured by forming a semiconductor film such as a GaN-based compound semiconductor film on the main surface (polished surface) of a substrate for semiconductor elements such as sapphire by epitaxial crystal growth and forming electrodes. The semiconductor film is formed while heating the substrate for a semiconductor element, and then cooled to normal temperature. Therefore, due to the difference in thermal expansion between the semiconductor element substrate and the semiconductor film during cooling, warping protruding toward the semiconductor film side occurs. [0003] In order to correct the curvature, for example, Patent Doc...

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Problems solved by technology

[0006] In the technology described in Patent Document 1, it is necessary to install a pressing mechanism in the MOCVD (Metal-Organic Chemical Vapor Deposition, Metal-Organic Chemical Vapor Deposition) device for epitaxial growth, which increases the cost of the device and is not suitable for mass production.

In addition, in response to the demand for increasing the size of substrates for semiconductor elements for the purpose of mass production, the frequency of cracking of substrates for semiconductor elements during pressing may increase, resulting in a decrease in yield.

[0007] In the technology described in Patent Document 2, high surface roughness is required to irradiate laser light into the inside of the sapphire substrate, so the load on the polishing process increases

In addition, in order to irradiate laser light to a predetermined position, high positional accuracy is required, so the cost of the device increases

In addition, in the case of reforming the substrate for semiconductor elements by irradiating laser light after film formation, the amount of warpage varies depending on the material and thickness of the film to be deposited, or the amount of warpage varies even under the same film formation conditions. Therefore, even if the irradiation conditions of the laser beam are constant, the correction amount of the warp may not be stable, and the productivity may not be improved.

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