Preparation method for nanometer quantum dot floating gate
A technology of nano-quantum dots and floating gates, which is applied in the field of preparation of nano-quantum dots floating gates, can solve the problems of difficult control, complicated steps of nano-silicon quantum dots, etc., and achieves the effects of improved efficiency and easy control of the preparation process.
Active Publication Date: 2014-01-15
SEMICON MFG INT (SHANGHAI) CORP
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] In order to solve the problem of cumbersome steps and difficult control in the preparation of nano-silicon quantum dots in the prior art, the present invention provides a method for preparing a nano-quantum dot floating gate, the method comprising the following steps:
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0030] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0031] The invention provides a method for manufacturing a nano-silicon quantum dot floating gate. figure 2 According to one embodiment of the present invention, the process flow chart of making nano-silicon quantum dot floating gate, Figures 3a-3j It is a cross-sectional view of a device obtained in each step of manufacturing a nano-silicon quantum dot float...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a preparation method for a nanometer quantum dot floating gate. The preparation method comprises the following steps: providing a semiconductor substrate; forming a tunneling dielectric layer on the semiconductor substrate; forming a first sacrificial layer, a second sacrificial layer and a third sacrificial layer on the tunneling dielectric layer; etching the first sacrificial layer, the second sacrificial layer and the third sacrificial layer so as to form a groove and expose the tunneling dielectric layer; depositing nanometer quantum dots on the surface of the tunneling dielectric layer in the groove and the surface of the first sacrificial layer; depositing a dielectric layer so as to cover the nanometer quantum dots; performing a planarization step so as to remove the first sacrificial layer and the dielectric layer and the nanometer quantum dots on the first sacrificial layer and expose the second sacrificial layer; depositing a control gate material layer; and performing another planarization step so as to remove the control gate material layer on the second sacrificial layer. The method is controlled more easily; and the nanometer silicon quantum dots, of which storage characteristics are excellent, are prepared more efficiently.
Description
technical field [0001] The invention relates to a semiconductor storage device, in particular to a method for preparing a nanometer quantum dot floating gate. Background technique [0002] With the rapid development of portable electronic devices (such as mobile phones, digital cameras, MP3 players, and PDAs, etc.), the requirements for data storage are getting higher and higher. Non-volatile memory has become the most important storage component in these devices because of its ability to save data even when power is off. Among them, because flash memory (flash memory) can achieve a high chip storage density, and no new materials are introduced , The manufacturing process is compatible, therefore, it can be more easily and reliably integrated into own digital and analog circuits. [0003] Floating gate structure memory is one of the important flash memory devices, and it is a mainstream memory type that is widely used and generally recognized, and is widely used in the elec...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/283B82Y10/00
CPCH01L21/283H01L29/40114
Inventor 隋运奇何其旸
Owner SEMICON MFG INT (SHANGHAI) CORP