Semiconductor device manufacturing method

Abstract

The invention provides a manufacturing method for a CMOS transistor with a dual work function metal gate. The method involves forming gate materials with different thickness in different MOS areas, then introducing metal aluminum as metal for adjusting a work function, and through an annealing process, by using the characteristics that a lower work function can be obtained through an A1 staying at a gate layer and a higher work function can be obtained through the A1 entering a gate insulation layer, the dual work function metal gate of the CMOS can be realized, and the integration process of the dual work function metal gate is simplified.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing methods, in particular to a manufacturing method of a CMOS transistor with a dual work function metal gate. Background technique [0002] As the feature size of CMOS devices becomes smaller and smaller, in order to achieve a large saturation current, the threshold voltage of the transistor must be reduced. Among the many possible solutions, one method is to use metal gates with edge work functions to reduce the threshold voltage of transistors, and for two different transistors in CMOS, PMOS and NMOS, this requires the use of metal gates with two different work functions , that is, the dual work function metal gate. Usually, different materials are used to obtain a dual work function metal gate, which requires high metal etching technology, increases the process flow, and increases the complexity of the process. [0003] Therefore, it is necessary to provide a new method for man...

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Problems solved by technology

Usually, different materials are used to obtain dual work function metal gates, which requires high metal etching technology, increases the process flow, and increases the complexity of the process.

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