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A kind of gan-based white light emitting diode and preparation method thereof

A light-emitting diode, white light technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of fast light decay, low stability and reliability of phosphors, complex packaging process, etc. Stability and service life, simple effect of industrial production

Active Publication Date: 2016-08-03
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to the fast light decay of phosphor powder and the complicated packaging process, white LEDs using phosphor powder have a short service life and low stability and reliability.

Method used

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  • A kind of gan-based white light emitting diode and preparation method thereof
  • A kind of gan-based white light emitting diode and preparation method thereof

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Embodiment 1

[0026] An embodiment of the present invention provides a GaN-based white light emitting diode, see figure 1 , the light-emitting diode includes: a substrate 1, a first low-temperature buffer layer 2 grown sequentially on the front of the substrate 1, a first high-temperature buffer layer 3, an n-type GaN layer 4, a first quantum well light-emitting layer 5, and a p-type GaN layer 6. ITO (IndiumTinOxidesIndiumTinOxides, nano-indium tin metal oxide) layer 7, n-type electrode 8, p-type electrode 9 and passivation layer 10; second low-temperature buffer layer 11 and second high-temperature buffer layer grown sequentially on the reverse side of substrate 1 layer 12 and the second quantum well light-emitting layer 13. The first quantum well light-emitting layer 5 is used to emit blue light, and the second quantum well light-emitting layer 13 is used to emit yellow light under the excitation of the blue light emitted by the first quantum well light-emitting layer 5 .

[0027] Furthe...

Embodiment 2

[0039] An embodiment of the present invention provides a method for preparing a GaN-based white light emitting diode, see figure 2 , the method includes:

[0040] Step 201: providing a substrate;

[0041] Preferably, the substrate is a sapphire substrate, and it is easy to know that the substrate may also be a Si substrate, a SiC substrate, or a GaN substrate.

[0042] In this embodiment, the front side and / or the back side of the substrate are patterned surfaces. The pattern on the patterned surface can be a periodic pattern array, and the pattern units in the array can be one or a combination of circles, square triangles or irregular patterns. The patterned surface can increase the transmittance at the material boundary, so that light can pass through the substrate more efficiently, thereby avoiding multiple reflections of light in the substrate and reducing the light extraction efficiency. Of course, in other embodiments, the front and back sides of the substrate may al...

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Abstract

The invention discloses a GaN-based white light-emitting diode and the preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a substrate, wherein a first low-temperature buffer layer, a first high-temperature buffer layer, an n-type GaN layer, a first quantum well luminous layer, a p-type GaN layer, a nano indium tin metal oxide layer, an n-type electrode, a p-type electrode and a passivation layer are grown on the front surface of the substrate in sequence; a second low-temperature buffer layer, a second high-temperature buffer layer and a second quantum well luminous layer are grown on the rear surface of the substrate in sequence; the first quantum well luminous layer is used for emitting blue light; the second quantum well luminous layer is used for emitting yellow light under the excitation of the blue light emitted from the first quantum well luminous layer. According to the GaN-based white light-emitting diode, different quantum well structures are grown on the front and rear surfaces of the substrate, so that the blue light and the yellow light can be emitted respectively and are combined into white light; fluorescent powder is not used and light failure influence is small, so that the GaN-based white light-emitting diode is good in stability, long in service life and simple in industrial production.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor optoelectronic devices, in particular to a GaN-based white light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode), especially white LED, is known as the fourth-generation green lighting source because of its advantages of high efficiency, energy saving, and no pollution. As white LEDs are more and more widely used in lighting, backlight and other fields, it is of great significance to study them. [0003] Existing white light LEDs mostly use short-wavelength light emitted by the LED to excite phosphors of various colors, so that the phosphors of various colors emit light of various colors, and then mix the light of various colors to generate white light. For example, using a blue LED to excite YAG (yttrium aluminum garnet, chemical formula Y 3 Al 5 o 12 ) fluorescent powder, wherein part of the b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/08H01L33/06H01L33/00
CPCH01L33/0075H01L33/06H01L33/08H01L33/32
Inventor 桂宇畅
Owner HC SEMITEK SUZHOU