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Method for Monitoring Defect Detection Rate of Electron Beam Scanner

A technology of electron beam scanner and defect detection rate, which is applied in the direction of circuit, electrical components, semiconductor/solid-state device testing/measurement, etc., can solve problems such as damage and unreliable monitoring methods, and achieve promotion and avoid defect detection Inaccurate rate and accurate monitoring method

Active Publication Date: 2016-05-04
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

The problem with this method is that since the E-beam is scanned by electron beams, it has a certain degree of destructive effect on the scanned area, so that the gray level of the long-term scanned area on the standard wafer will be significantly lower than other areas, so Repeatedly using the same standard wafer to test the defect detection rate of the E-beam machine is an obviously unreliable monitoring method

Method used

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  • Method for Monitoring Defect Detection Rate of Electron Beam Scanner
  • Method for Monitoring Defect Detection Rate of Electron Beam Scanner
  • Method for Monitoring Defect Detection Rate of Electron Beam Scanner

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Embodiment Construction

[0014] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0015] Such as figure 1 As shown, the method for monitoring the defect detection rate of an electron beam scanner provided by an embodiment of the present invention includes the following steps:

[0016] Step S10, establishing a test unit in the first area of ​​the CMOS wafer, the test unit includes an NMOS area and a PMOS area.

[0017] Wherein, the first region can be any region on the wafer, and its size is the same as that of a chip unit; in a preferred embodiment, the first region is located on the dicing lane of the wafer. Establishing test units on the dicing lanes of the wafer does not occupy the position of valid chip units on the wafer and causes no waste. In the subsequent process, when the wafer is diced, the test unit is destroyed.

[0018] The structure of the test unit is almost the same or similar to that of the c...

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Abstract

The invention relates to a method for monitoring a defect detection rate of an electron beam scanner. The method comprises the following steps that at least one test unit is built in the first region of a CMOS wafer, and comprises an NMOS region and a PMOS region; a plurality of NMOS breakdown defects are formed in the NMOS region; the test unit is scanned through the electron beam scanner to detect the NMOS breakdown defects, and the detection rate is recorded; the CMOS wafer is replaced with a next CMOS wafer, and the above steps are repeated. The monitor method is more accurate, more reliable and beneficial for being promoted in the field of semiconductor industries.

Description

technical field [0001] The invention relates to the field of semiconductor processing and manufacturing, and more specifically relates to a method for monitoring the defect detection rate of an electron beam scanner. Background technique [0002] With the development of integrated circuit technology and the scaling down of key dimensions, as well as the increase in the complexity of semiconductor manufacturing, electron beam scanners (E-beam) are increasingly used in semiconductor production, such as 55nm and below technology Insufficient etching defects of tungsten connection holes and copper connection holes of nodes, as well as dislocation leakage defects and nickel pipeline leakage defects all need to be detected by E-beam, and they are irreplaceable in the current process. In order to ensure the accuracy of the data of the electron beam defect scanner and prevent the performance change of E-beam itself from adversely affecting the process; therefore, it is necessary to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20H01L22/30
Inventor 范荣伟倪棋梁龙吟陈宏璘
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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