Quantum dot stacking structure and manufacturing method thereof and light emitting component

A technology of stacking structure and light-emitting elements, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of poor light conversion efficiency, self-aggregation, uneven thickness, etc.

Inactive Publication Date: 2014-01-29
CHI LIN OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, since the quantum dot phosphor is prone to self-aggregation during the coating process, resulting in uneven thickness and poor light conversion efficiency, therefore, how to uniformly coat the quantum dot phosphor to make it uniform in thickness is a major issue.

Method used

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  • Quantum dot stacking structure and manufacturing method thereof and light emitting component
  • Quantum dot stacking structure and manufacturing method thereof and light emitting component
  • Quantum dot stacking structure and manufacturing method thereof and light emitting component

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Embodiment Construction

[0030] reference Figure 1 to Figure 7 , Showing a schematic diagram of an embodiment of the method for manufacturing the quantum dot stack structure of the present invention. reference figure 1 , Provide a substrate layer 10. The substrate layer 10 is made of a light-transmissive material. In this embodiment, the substrate layer 10 is glass; however, in other embodiments, the substrate layer 10 may also be made of plastic or other flexible materials. Next, a bottom spacer layer 12 is formed on the substrate layer 10. The bottom spacer layer 12 is made of a flexible and light-permeable material, and contains a polymer silicon oxide compound. In this embodiment, the polymer silicon-oxygen compound contains a methyl group, for example, poly-dimethylsiloxane (PDMS). In addition, the bottom spacer layer 12 has the characteristics of low surface tension. Preferably, the surface tension is lower than 30 dyne / cm. In this embodiment, the bottom spacer layer 12 is a film, which is at...

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Abstract

The invention relates to a quantum dot stacking structure and a manufacturing method thereof and a light emitting component. The quantum dot stacking structure comprises a substrate layer, at least one quantum dot layer and at least one spacer layer. The quantum dot layers are arranged on the substrate layer. The spacer layers are adjacent to the upper surfaces or the lower surfaces of the quantum dot layers and contain macromolecule silica oxygen compound. Thus, the quantum dot layers are uniform in thickness, and the spacer layers can protect the quantum dot layers.

Description

Technical field [0001] The invention relates to a stacked structure, a manufacturing method thereof, and a light-emitting element, in particular to a quantum dot stacked structure, a manufacturing method thereof, and a light-emitting element including the quantum dot stacked structure. Background technique [0002] The current implementation of white light LEDs is blue LEDs plus yellow YAG phosphors. The disadvantage is that they lack the red light band, which is unnatural compared to white light. In addition, if nano-level phosphors are used, the disadvantages are that the particle size is difficult to control, the price of rare earth elements as activators is relatively high, and it is difficult to configure a white light source with a low temperature. In terms of manufacturing methods, traditional phosphor coating is divided into two categories: Conformal Distribution and Remote Phosphor. The disadvantage is that it is easy to spray unevenly and cause thicker phosphor thicknes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/00
CPCH01L33/505H01L33/507H01L2933/0041
Inventor 蔡志豪施希弦林建中郭浩中陈信助陈国儒
Owner CHI LIN OPTOELECTRONICS CO LTD
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