High-voltage IGBT driving and protecting circuit

Abstract

The invention discloses a high-voltage IGBT driving and protecting circuit. A signal processing circuit, an isolation transformer transmission circuit, an isolation power supply circuit, an undervoltage protecting circuit, a gate pole clamping circuit, a short-circuit protecting circuit, an IGBT dynamic fault detecting circuit, an insulated gate bipolar transistor and a power supply are included. The high-voltage IGBT driving and protecting circuit has the advantages that working under a high-voltage operation environment can be achieved, high power can be output, high working efficiency is achieved, quick response is achieved, low-input-output delay time is at the microsecond level, high anti-jamming capability is achieved, input 1800V bus voltages can achieve driving isolation capacity of above 4000V, the safety of a system is well guaranteed, meanwhile, working state information transmitted through feedback signals can be monitored and controlled by a central control unit in real time, system reliability is greatly improved, and the high-voltage IGBT driving and protecting circuit can be widely used in the industrial control field where power conversion is needed.

Description

technical field [0001] The invention relates to a high-voltage IGBT drive and protection circuit, belonging to the technical field of power electronics. Background technique [0002] Insulated Gate Bipolar Transistor IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), and has the power of MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large, the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V and above, such ...

AI Technical Summary

Problems solved by technology

[0005] However, when the traditional auxiliary converter works under the condition of high voltage and high power, it inevitably has defects such as slow response speed of the circuit, poor anti-interference ability, and low work efficiency, which greatly affects the safety and reliability of the system.

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