SE solar cell and manufacturing method thereof

Abstract

The invention provides an SE solar cell and a manufacturing method thereof. The method comprises the following steps of (S1) providing a first class semiconductor substrate and carrying out acid texture surface making to form a honeycomb suede-like structure; (S2) forming a layer of mask on the honeycomb suede-like structure, wherein the mask covers an upper electrode printing area; (S3) then carrying out alkali texture surface making on the first class semiconductor substrate to form a pyramid suede-like structure on the uncovered area of the mask; (S4) removing the mask; (S5) carrying out whole-surface second class light doping on the first class semiconductor substrate; (S6) then carrying out second class heavy doping on the upper electrode printing area of the first class semiconductor substrate; (S7) finally carrying out edge etching, cleaning, antireflection film sedimenting, upper electrode and lower electrode forming and testing, and completing the manufacturing of the SE solar cell. According to the SE solar cell and the manufacturing method thereof, the honeycomb/pyramid composite suede-like structures are adopted, contact resistance can be reduced, light absorption can be improved at the same time, and thus the solar cell is high in efficiency.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to an SE solar cell and a manufacturing method thereof. Background technique [0002] At present, the development of high-efficiency cell technology is the key to improving the efficiency of solar cells. The relatively mature high-efficiency battery technology is dominated by selective emitter (SE) batteries. The SE cell is a selective diffusion cell, which has two characteristics: 1) a highly doped deep diffusion region is formed in the gate line contact area (below the gate line and its vicinity); 2) a low doped shallow diffusion region is formed in the illuminated area. By selectively doping the emitter region, the effects of different diffusion square resistances are realized in the gate line contact region and other regions, and the series resistance is reduced. Among them, the metallization area (gate line contact area) has a high doping concentration and a large junction ...

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a SE solar cell and its manufact

Images