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SE solar cell and manufacturing method thereof

A technology of solar cells and manufacturing methods, applied in the field of solar cells, can solve the problems of high electrode contact resistance and poor light absorption, and achieve the effects of low contact resistance, good light absorption, and improved photoelectric conversion efficiency

Inactive Publication Date: 2014-02-05
TAINERGY TECH KUNSHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a SE solar cell and its manufacturing method, which are used to solve the problems of poor light absorption and high electrode contact resistance of the SE solar cell in the prior art

Method used

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  • SE solar cell and manufacturing method thereof
  • SE solar cell and manufacturing method thereof
  • SE solar cell and manufacturing method thereof

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Embodiment Construction

[0052] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0053] see Figure 1 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides an SE solar cell and a manufacturing method thereof. The method comprises the following steps of (S1) providing a first class semiconductor substrate and carrying out acid texture surface making to form a honeycomb suede-like structure; (S2) forming a layer of mask on the honeycomb suede-like structure, wherein the mask covers an upper electrode printing area; (S3) then carrying out alkali texture surface making on the first class semiconductor substrate to form a pyramid suede-like structure on the uncovered area of the mask; (S4) removing the mask; (S5) carrying out whole-surface second class light doping on the first class semiconductor substrate; (S6) then carrying out second class heavy doping on the upper electrode printing area of the first class semiconductor substrate; (S7) finally carrying out edge etching, cleaning, antireflection film sedimenting, upper electrode and lower electrode forming and testing, and completing the manufacturing of the SE solar cell. According to the SE solar cell and the manufacturing method thereof, the honeycomb / pyramid composite suede-like structures are adopted, contact resistance can be reduced, light absorption can be improved at the same time, and thus the solar cell is high in efficiency.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to an SE solar cell and a manufacturing method thereof. Background technique [0002] At present, the development of high-efficiency cell technology is the key to improving the efficiency of solar cells. The relatively mature high-efficiency battery technology is dominated by selective emitter (SE) batteries. The SE cell is a selective diffusion cell, which has two characteristics: 1) a highly doped deep diffusion region is formed in the gate line contact area (below the gate line and its vicinity); 2) a low doped shallow diffusion region is formed in the illuminated area. By selectively doping the emitter region, the effects of different diffusion square resistances are realized in the gate line contact region and other regions, and the series resistance is reduced. Among them, the metallization area (gate line contact area) has a high doping concentration and a large junction ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0352H01L31/068
CPCY02E10/50H01L31/02363H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 童锐张小刚储凤舞杨大谊
Owner TAINERGY TECH KUNSHAN
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