Structural design and manufacturing method of multi-section wide-spectrum LED

Abstract

The invention provides a structure design and fabrication method of a multi-section wide-spectrum LED. The method comprises the follow steps: (1) injecting a metal source and a V-group reactant onto a substrate in advance to form a layer of buffer layer on the substrate through pyrolysis; (2) improving the growth temperature, growing an undoped GaN layer on the buffer layer, and growing a layer of N-type GaN layer on the undoped GaN layer; (3) adjusting the temperature to a temperature which is suitable for the growth of a quantum well, and growing a GaN / InGaN multi-period quantum well structure on the N-type GaN layer; (4) growing a layer of P-type GaN on the GaN / InGaN multi-period quantum well structure; (5) and repeating the step (3) and the step (4) to form a multi-section light-emitting diode LED structure combined by a plurality of [GaN / InGaN multi-period quantum well +P-type GaN layers]. According to the embodiments of the invention, the light-emitting efficiency of the LED can be effectively improved, and the wide-spectrum LED structure is formed.

Description

technical field [0001] The invention relates to a method for growing a III-V semiconductor light-emitting diode, in particular to a structural design and manufacturing method of a multi-node and wide-spectrum light-emitting diode (LED). Background technique [0002] III-V semiconductor materials have been widely used in the fields of lighting, solar cells, and high-power devices, especially wide-bandgap semiconductor materials represented by GaN (gallium nitride) series, which are after Si and GaAs The third-generation semiconductor materials have attracted extensive attention from the scientific research community and the industry. And GaN is currently the most important material for blue-green light-emitting diodes, which is fully promoted in the industry and continues to seize the traditional lighting market. [0003] However, LEDs grown with GaN have some defects to be solved. 1. Since commercial high-quality bulk GaN crystals are not yet available, heterogeneous subst...

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Problems solved by technology

[0006] The purpose of the present invention is to overcome the defect of traditional LED structure, utilize the structure of multi-section LED to solve the problem that the hole injection efficiency is too low, and the quantum well utilization rate is low, improve the method and quantity of hole injection quantum well, improve the quantum well The utilization rate, thereby further improving the luminous efficiency of LED

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