Precise representation method of matching characteristics of power transistor

Abstract

The invention discloses a precise representation method of matching characteristics of a power transistor. The precise representation method is characterized in that variation of input / output impedance values of a tested power transistor is achieved through control of a relative phase of two signal sources inside a testing instrument, and pursuantly, main performance indexes such as gain, output power and the like of the tested piece under different impedance conditions are measured; and a test result indirectly provides main parameters of a matching circuit when the transistor is encapsulated into an amplifier as well as main performance parameters that the transistor can reach in an optimal matching state. The precise representation method of the matching characteristics of the power transistor has the characteristics that the coverage frequency range is wide, the test speed is high, and variation of the input / output impedance of the tested piece in the whole impedance chart is achieved; and the method can be further used for parameter measurement of a transistor whose input / output impedance is not 50 ohms.

Description

technical field [0001] The invention relates to a method for characterizing the matching characteristics of a power transistor. Background technique [0002] Accurate characterization of power amplifiers at RF and microwave transmitters is critical in modern RF and microwave communication systems. From traditional silicon bipolar transistors to gallium arsenide power transistors, LDMOS power transistors, and even the latest high-power silicon carbide and gallium nitride power transistors, amplifier designers are trying to extract more and more power levels from transistors. It is necessary to accurately characterize its characteristic parameters under working conditions. Usually, in the design and testing of power devices, it is necessary to obtain an accurate model of the power transistor for design simulation, to clarify the optimal source impedance and load impedance of the power transistor, to improve the stability of the power transistor, and so on. Only after having ...

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Problems solved by technology

The test cost of this method is relatively high, and the test time is longer due to the use of a mechanical impedance adjuster; during the measurement process, it is necessary to replace the impedance adjuster of the corresponding frequency band for different frequency bands; due to the size, for the lower frequency DUT , it is usually difficult to have a suitable impedance adjuster; and the test process is very slow, theoretically speaking, impedance adjustment cannot be performed in the entire impedance chart plane

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