Semiconductor light emitting structure and manufacturing method thereof
A light-emitting structure and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., to achieve good electrical conductivity, improve light extraction efficiency, and improve the effects of heat dissipation and conduction paths
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Embodiment 1
[0021] Such as figure 1 As shown, in the first embodiment of the present invention, a semiconductor light emitting structure is provided, the semiconductor structure includes, sequentially located on the substrate, a buffer layer, a first semiconductor layer, an active region light emitting layer and a second The semiconductor layer; the first transparent conductive layer deposited on the second semiconductor layer; the first reflective layer structure deposited on the first transparent layer, and etched into a grid-like pattern; the first transparent conductive layer and the grid-like The second transparent conductive layer deposited on the first reflective layer; the structure of the second reflective layer deposited on the second transparent conductive layer, and the pattern is etched to cover the exposed first transparent conductive layer and form a grid pattern.
[0022] Further, the metal electrode layer deposited on the second transparent conductive layer and the second...
Embodiment 2
[0029] In Embodiment 2 of the present invention, a method for manufacturing a semiconductor light emitting structure is provided, wherein, as Figure 2A-2E As shown, the method is described below.
[0030] Such as Figure 2A As shown, a buffer layer, an n-type semiconductor layer, a light-emitting layer in an active region, and a p-type semiconductor layer are formed on a substrate at one time.
[0031] Such as Figure 2B As shown, a first transparent conductive layer is formed on the p-type semiconductor layer.
[0032] Such as Figure 2C As shown, the first reflective layer is formed on the first transparent conductive layer, and the first reflective layer is etched into a network structure, and the network shape is further shown as image 3 shown.
[0033] Such as Figure 2D As shown, the second transparent conductive layer is deposited and formed on the first reflective layer of the network structure and the exposed first transparent conductive layer.
[0034] Such ...
Embodiment 3
[0038] In Embodiment 3 of the present invention, another method for manufacturing a semiconductor light-emitting structure is provided, where part of the diagrams can be referred to Figure 2A-Figure 2E , the method is described below.
[0039] Such as Figure 2A As shown, a buffer layer, an n-type semiconductor layer, a light-emitting layer in an active region, and a p-type semiconductor layer are formed on a substrate at one time.
[0040] Such as Figure 2BAs shown, a first transparent conductive layer is formed on the p-type semiconductor layer.
[0041] Such as Figure 2C As shown, a first reflective layer is formed on the first transparent conductive layer, and the first reflective layer is etched into a network structure.
[0042] Such as Figure 2D As shown, the second transparent conductive layer is deposited and formed on the first reflective layer of the network structure and the exposed first transparent conductive layer.
[0043] Such as Figure 2E As shown...
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