Photoresist-Based Temporary Bonding and Debonding Methods
A temporary bonding and debonding technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the process on the back of the semiconductor wafer cannot withstand high temperature, etc., and achieve good consistency, not easy to fragment, The effect of breaking the temperature limit
Active Publication Date: 2016-04-27
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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[0005] The present invention proposes a temporary bonding and debonding method based on photoresist (ProLIFT100), which aims to solve the problem that the process on the back of the semiconductor wafer cannot withstand high temperature
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[0033] ① Rinse the gallium arsenide (GaAs) wafer and sapphire slide with a concentration of 10% hydrochloric acid (HCl) for 30 seconds, then rinse with deionized water, dry with nitrogen, and finally place Thoroughly dry the moisture in the oven to ensure a clean and dry surface.
[0034] ② Spin-coat ProLIFT100 on the front side of the gallium arsenide (GaAs) wafer, the rotation speed is 2000 rpm, the acceleration is 2000 rpm, the spin-coating time is 90 seconds, and the thickness of ProLIFT100 is about 6 μm.
[0035] ③ Spin-coat ProLIFT100 on the sapphire wafer with a rotation speed of 2000 rpm, an acceleration of 2000 rpm, and a spin-coating time of 90 seconds. The thickness of ProLIFT100 is about 6 μm.
[0036] ④Put the GaAs wafers and sapphire wafers coated with ProLIFT100 face up into the oven to cure ProLIFT100. The temperature of the oven is 250 degrees Celsius, and the baking time is 30 minutes.
[0037] ⑤Take the gallium arsenide (GaAs) wafer and sapphire wafer out o...
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The invention is a temporary bonding and bonding-removing method based on a photoresist (ProLIFT100), and is characterized by comprising the temporary bonding and bonding-removing. The utility model has the advantages that: some key processing technologies of semiconductor wafer of GaAs, GaN and other compounds, such as back side metallization, back side through hole etching, can obtain better effects at a high temperature above 200 DEG C; since the ProLIFT100 can withstand the high temperature over 300 DEG C, the ProLIFT100 can serve to protect a wafer front shape and as an adhesion agent of an adhesive sheet; and therefore, the ProLIFT100 is quite suitable for the temporary bonding with a slide sheet in a semiconductor back side process. A spinning whirl coating method is used to coat a bonding transition layer, so that the great flatness and uniformity, simple process, and good repeatability are realized; the temporary slide sheet is not wore, and contaminated and the like in the whole process and can be recycled; and the bonding-removing process is simple, and does not require an external mechanical force, so that the fragmentation probability can be greatly reduced.
Description
technical field [0001] The invention relates to a temporary bonding and debonding method based on photoresist (ProLIFT100), which belongs to the technical field of semiconductor backside technology. Background technique [0002] As the frequency of semiconductor devices continues to rise, chip thickness has an important impact on device performance. For example, thin chips have many advantages, such as improving heat dissipation efficiency, mechanical properties and electrical properties, reducing packaging volume, and reducing weight. The backside process of semiconductor devices generally includes steps such as substrate thinning, through hole etching, and backside metallization. When the substrate of the wafer is thinned to 150 μm or even thinner, debris is prone to occur, and due to stress, the wafer It will be bent and deformed and cannot be operated. Therefore, it needs to be temporarily bonded with a glass sheet or other carrier before thinning, and the subsequent pro...
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IPC IPC(8): H01L21/02H01L21/60
Inventor 赵岩程伟吴璟
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD