Polishing head and polishing apparatus

A technology of grinding head and rigid ring, which is applied in the field of grinding head, can solve the problems of poor flatness of workpiece and uneven thickness of backing film, etc.

Inactive Publication Date: 2014-03-05
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The workpiece holding plate 112 usually uses a high flat ceramic plate, but due to the uneven thickness of the backing film 113a, etc., a slight pressure distribution occurs and undulations occur on the surface of the workpiece after processing, so there is a possibility that the flatness of the workpiece will be deteriorated. question

Method used

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  • Polishing head and polishing apparatus
  • Polishing head and polishing apparatus
  • Polishing head and polishing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～ Embodiment 3

[0099] Use as image 3 In the polishing apparatus of the present invention shown as the polishing head of the present invention, the workpiece was polished, and the variation in the grinding allowance in the surface of the polished workpiece was evaluated. As the workpiece W, a silicon single crystal wafer having a diameter of 300 mm and a thickness of 775 μm was used. Here, the thickness of the wafer before and after polishing is measured using a flatness measuring device as a flatness guaranteed region except for the 2 mm width of the outermost peripheral portion, and the difference between the thicknesses before and after polishing in the diameter direction cross section of the wafer is calculated to calculate Grinding allowance. As a flatness measuring device, a flatness measuring device (Wafer Sight) manufactured by KLA-Tencor was used.

[0100] First, the following polishing head was prepared. A rigid ring made of SUS with an outer diameter of 360 mm and an inner diam...

Embodiment 4～ Embodiment 7

[0111] Silicone rubber was pasted under the conditions of tension of 5N (Example 4), 20N (Example 5), 35N (Example 6), and 48N (Example 7). Conditions A silicon single crystal wafer was polished, and in the same manner as in Example 1, variations in the polishing allowance in the polished wafer surface were evaluated.

[0112] The distribution of the polishing allowance of the wafers polished in Examples 4 to 7 is shown in FIG. 7(A). In addition, as the grinding allowance distribution of the outer peripheral part of a wafer, the grinding allowance distribution in the range of 120 mm - 148 mm from a wafer center is shown in FIG. 7(B). As shown in FIG. 7(A) and FIG. 7(B), it can be seen that in any of the cases of Examples 4 to 7, it is possible to uniformly polish to the outer peripheral portion of the wafer.

[0113] In addition, as an index showing the distribution of the grinding allowance at the outer peripheral portion of the wafer, the difference between the maximum valu...

Embodiment 8、 Embodiment 9

[0116] In order to investigate the influence of the filling pressure of the incompressible fluid, the pressure at the time of filling was set to 10kPa (Example 8) and 40kPa (Example 9) and the polishing head filled with pure water was used. In addition, a silicon single crystal wafer was polished under the same conditions as in Example 7, and the variation in the polishing allowance in the wafer surface after polishing was evaluated in the same manner as in Example 7.

[0117] exist Figure 9, represents the distribution of the grinding allowance in the peripheral portion of the wafer polished in Example 8 and Example 9. As mentioned above, the deviation of the polishing allowance at the outer peripheral portion of the wafer in Example 7 was 0.011 μm. On the other hand, when the filling pressure is 10 kPa lower than the pure water filling pressure of 20 kPa in Example 7, that is, Example 8 In the case of , the deviation of the grinding margin at the outer peripheral portion o...

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PUM

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Abstract

The present invention is a polishing head which is provided with at least: an annular rigid ring; a rubber film that is bonded to the rigid ring at a uniform tension; a back plate that is joined to the rigid ring so as to form a space together with the rubber film and the rigid ring; and an annular template that is arranged concentrically with the rigid ring in the periphery of the lower surface portion of the rubber film and holds an edge portion of a workpiece. The polishing head polishes the front surface of the workpiece by holding the back surface of the workpiece in the lower surface portion of the rubber film and bringing the front surface of the workpiece in slide contact with a polishing cloth that is bonded to a polishing plate. The polishing head is characterized by additionally comprising a non-compressible fluid that is sealed in the above-described space. Consequently, final polishing of a workpiece can be performed and the entire of the workpiece can be uniformly polished regardless of the thickness of a template by a polishing head that holds the back surface of the workpiece at a rubber film, while holding the edge portion of the workpiece with the template. The present invention also provides a polishing apparatus.

Description

technical field [0001] The present invention relates to a polishing head for holding a workpiece when polishing the surface of the workpiece, and a polishing device provided with the polishing head, and more particularly to a polishing head for holding a workpiece on a rubber film and a polishing device provided with the polishing head. Background technique [0002] With the high integration of semiconductor devices in recent years, the requirements for their flatness have become more and more stringent. Furthermore, in order to improve the yield of semiconductor chips, even the flatness of the region near the edge of the wafer is required. [0003] The shape of the semiconductor wafer is determined by the final mirror grinding process. In particular, a silicon wafer with a diameter of 300mm is subjected to primary polishing on both sides to meet strict flatness specifications, and then secondary and finishing surface polishing on one side to improve surface defects or surf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/30H01L21/304
CPCB24B37/30B24B37/32B24B37/00B24B37/34H01L21/304B24B55/00
Inventor 桝村寿
Owner SHIN-ETSU HANDOTAI CO LTD
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