Self-doped silicon germanium/silicon multiple quantum well thermal material for uncooled infrared detection array

Abstract

The invention discloses a thermosensitive material which is of a self-doped silicon-germanium / silicon multiple quantum well structure, has a high temperature resistance coefficient and is applied to an uncooled infrared detection array. The material comprises a bottom contact layer, a bottom isolation layer, the silicon-germanium / silicon multiple quantum well structure, a top isolation layer and a top contact layer. When the thickness of each isolation layer is 35 to 100nm, boron particles diffuse from the contact layers to the silicon-germanium / silicon multiple quantum well structure, so as to form a carrier. The design simplifies a process and is conductive to preparing the silicon-germanium / silicon multiple quantum well structure with high lattice quality. The invention discloses a pixel structure of the uncooled infrared detection array which uses the material. The thickness of each support layer in double support layers is 200nm to 250nm. Under the condition that optical conditions are met, the pixel structure is stable. The invention further discloses an extension growth process, which is based on a low pressure chemical vapor deposition technology, of the material.

Description

technical field [0001] The invention belongs to the sensitive material technology for an uncooled infrared detection array, and specifically relates to a heat-sensitive material with a self-doped silicon germanium / silicon multi-quantum well structure and a relatively high temperature resistivity coefficient. Background technique [0002] Infrared imaging technology has a wide range of applications and demands in military and civilian fields. Infrared imaging reflects the information of thermal radiation on the surface of an object and its internal heat dissipation. It is an extension of people's vision beyond the visible light band and a new means of observing and perceiving the objective world. The focal plane array is a sensitive component of infrared imaging, which largely determines the quality of infrared imaging. In the 1970s and 1980s, the cooled infrared focal plane array using mercury cadmium telluride as the sensitive material achieved great success. In the 1990s...

AI Technical Summary

Problems solved by technology

[0003] However, the sensitive material VO x Both α-Si and α-Si have their own shortcomings, which limit the development of uncooled infrared detection technology

Although VO x The temperature coefficient of resistance (TCR) of the thin film is relatively high, but there are problems of poor compatibility with the traditional MEMS process and pollution to the production line; compared with vanadium oxide, the MEMS process compatibility of the α-Si thin film is better, but the TCR is relatively Low, and its amorphous crystal structure makes the 1 / f noise of the material larger

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