Terahertz source amplifying device based on multiple-cascade high-frequency structure

A high-frequency structure and amplifying device technology, which is applied in the field of vacuum electronic devices, can solve the problems of single-stage traveling wave tube output power level that needs to be improved, unfavorable anti-interference and imaging system applications, and inability to output broadband signals. The difficulty of development, the realization of high power output, and the effect of reducing the weight of the magnetic field

Active Publication Date: 2014-03-12
INST OF ELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (1) For a single-stage traveling wave tube amplifier, power amplification and frequency band broadening can be achieved, but the output signal bandwidth of the current THz band traveling wave tube amplifier is narrow, which limits its radar target detection in electronic countermeasures. On the other hand , the output power level of the single-stage traveling wave tube needs to be improved, which has greatly restricted its application in ultra-wideband radar long-distance detection, high-resolution imaging radar, etc.
[0008] At present, a THz extended interaction oscillator has been developed. Although it can achieve higher repetition frequency and higher output power, it cannot output broadband signals, which is not conducive to the application of anti-jamming and imaging systems.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz source amplifying device based on multiple-cascade high-frequency structure
  • Terahertz source amplifying device based on multiple-cascade high-frequency structure
  • Terahertz source amplifying device based on multiple-cascade high-frequency structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that in the drawings or description of the specification, similar or identical parts use the same drawing numbers. The implementations not shown or described in the drawings are those known to those of ordinary skill in the art. In addition, the directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only directions referring to the drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.

[0041] The present invention discloses a cascaded multi-electron beam extended interaction terahertz radiation source amplification chain using a combination of a backward wave amplifier and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a terahertz source amplifying device based on a multiple-cascade high-frequency structure. The terahertz source amplifying device is a cascaded multi-electron-beam terahertz radiation source combining a backward wave amplifier and a traveling wave amplifier. A THz excitation signal is input to the backward wave amplifier and is amplified through backward wave electron beam-wave interaction, a backward wave signal is output to a traveling wave high-frequency structure through dual ports, multistage amplification and band broadening are realized through multiple beam-wave interaction at a traveling wave section, and power synthesis is carried out on signals output by the multiple-cascade structure. The terahertz source amplifying device based on multiple-cascade high-frequency structure has the characteristics of high power, high gain and wide band, has absolute advantages in implementing a THz integrated vacuum electronic device and has important application prospects in aspects such as THz radar, communication, danger detection and imaging.

Description

Technical field [0001] The invention relates to the technical field of vacuum electronic devices, in particular to a terahertz source amplifying device based on a multi-cascade structure with a backward wave amplifier as an excitation source. Background technique [0002] Terahertz (Terahertz, 1THz = 10 12 Hz) wave refers to the electromagnetic wave with frequency in the band of 0.1~10THz, located between infrared and microwave, in the transition zone from macroelectronics to microelectronics. THz wave has the characteristics of transient, broadband, coherence, low energy, etc., and its unique performance is suitable for communication (broadband communication), radar, electronic countermeasures, electromagnetic weapons, astronomy, medical imaging (unmarked genetic examination, cellular level Imaging), non-destructive testing, safety inspection (biochemical inspection) and other fields have brought a profound impact. As a frequency band resource that has yet to be further develop...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/42H01J23/06
Inventor 刘文鑫张兆传王勇赵超刘濮鲲
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products