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LED chip manufacturing method and LED chip

An LED chip and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as serious leakage, drop in reverse breakdown voltage of the chip, and the chip cannot meet the basic requirements of the device, so as to reduce etching and improve effect of brightness

Active Publication Date: 2016-03-16
EPITOP PHOTOELECTRIC TECH
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  • Abstract
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Problems solved by technology

[0004] However, the above two technologies can only be used alone. If they are combined, that is, the reverse breakdown voltage of the chip manufactured by using the reduced scribe technology on the PSS patterned substrate is greatly reduced, and the leakage is serious, resulting in the failure of the chip. To meet the basic requirements of the device, it is impossible to achieve the effect of further improving the luminous efficiency

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  • LED chip manufacturing method and LED chip
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  • LED chip manufacturing method and LED chip

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Embodiment Construction

[0023] Because PSS technology has advantages in improving the quality of crystal growth and increasing the luminous flux of semiconductor devices; the technology of reducing the area of ​​the dicing line and retaining the active area of ​​the chip is also quite obvious for the brightening effect of the chip. However, when the above two technologies are used at the same time, that is, the reverse breakdown voltage of the chip manufactured by using the reduced dicing line technology on the PSS patterned substrate is greatly reduced, and the leakage is serious, which makes the chip unable to meet the basic requirements of the device. The effect of further improving the luminous efficiency cannot be achieved.

[0024] Aiming at this problem, the present invention proposes a technical solution to introduce the reduced dicing line technology into the patterned substrate so that the combination of the two technologies will not cause the above-mentioned device parameters to be bad. Com...

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Abstract

The invention provides an LED (light-emitting diode) chip manufacturing method and an LED chip. The method comprises the steps of manufacturing a patterned substrate with a cutting passage by adopting a wafer; growing an epitaxial layer on the patterned substrate with the cutting passage; etching the wafer grown with the epitaxial layer for manufacturing the LED chip, wherein in the etching process, at least a part of a region corresponding to the cutting passage is reserved for not being etched. By the adoption of the LED chip manufacturing method and the LED chip, the lighting efficiency of the LED chip can be further improved.

Description

technical field [0001] The invention relates to chip technology, in particular to a method for manufacturing an LED chip and the LED chip. Background technique [0002] With the development of light-emitting diode (Light Emitting Diode, referred to as: LED) technology, LED can be used as an energy-saving lighting source to replace the original incandescent lamp with low light efficiency and fluorescent lamp with mercury pollution. With the gradual maturity of LED technology and the needs of industrialization and marketization, there are stricter requirements on the luminous efficiency and other properties of LED devices. [0003] With the continuous development and progress of LED epitaxial growth technology and chip manufacturing technology. In order to improve the brightness of the chip, people in the industry are looking for breakthroughs in the substrate, epitaxy, chip manufacturing process, packaging and other links to improve the performance of LED devices. Among the...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 徐琦郑远志李晓莹陈向东康建
Owner EPITOP PHOTOELECTRIC TECH