Photolithographic pattern for modeling and measurement method thereof

A graphics and measurement technology, which is applied in the direction of photo-plate making process of originals, optics, and patterned surfaces for photomechanical processing, can solve the problems of low quantity accuracy and unfavorable OPC model establishment, so as to improve efficiency and reduce Superposition of accumulated errors, effect of improving accuracy

Active Publication Date: 2014-03-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The quantity accuracy obtained by measuring OPC graphics is low, which is not conducive to the establishment of OPC models

Method used

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  • Photolithographic pattern for modeling and measurement method thereof
  • Photolithographic pattern for modeling and measurement method thereof
  • Photolithographic pattern for modeling and measurement method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0037] Please refer to figure 2 , the lithographic pattern for modeling includes: several reference patterns 201 distributed in rows and columns, and each reference pattern 201 includes a plurality of first linear patterns distributed at intervals; the auxiliary pattern between adjacent reference patterns 201 in each row Graphic 202, the auxiliary graphic 202 includes a position graphic 203 and a data graphic 204, the position graphic 203 is used to locate the reference position information of the adjacent reference graphic 201 and the reference position information of the data graphic 204, and the data graphic 204 uses Information about the row where the reference pattern 201 is located.

[0038] Specifically, the reference pattern 201 is usually formed on a photolithography mask. In the photolithography equipment, the reference pattern on the photomask is transferred to the photoresist layer through exposure and development processes, and then the photoresist layer is measu...

no. 2 example

[0045] Please refer to image 3 , the lithographic pattern for modeling includes: several reference patterns 201 distributed in rows and columns, and each reference pattern 201 includes a plurality of first linear patterns distributed at intervals; between adjacent reference patterns 201 in each row and between Auxiliary graphics 202 between adjacent reference graphics 201 of each column, said auxiliary graphics 202 include position graphics 203 and data graphics 204, and said location graphics 203 are used to locate reference position information and data of adjacent reference graphics 201 The reference position information of the graphic 204, the data graphic 204 in each row is used for the information in the row where the positioning reference graphic 201 is located, and the data graphic 204 in each column is used for the information in the column where the positioning reference graphic 201 is located.

[0046] Compared with the first embodiment, in this embodiment, there i...

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Abstract

The invention relates to a photolithographic pattern for modeling and a measurement method thereof. The photolithographic pattern comprises a plurality of basic patterns and auxiliary patterns, wherein the basic patterns are of row-column distribution, and each basic pattern comprises a plurality of first linear patterns which are distributed at intervals; the auxiliary patterns are located among adjacent basic patterns, each auxiliary pattern comprises a position pattern and a data pattern, the position patterns are used for positioning the reference position information of adjacent basic patterns and the reference position information of the data patterns, and the data patterns are used for positioning the information on rows or columns where the basic patterns are positioned. According to the photolithographic pattern for modeling and the measurement method thereof, the accuracy of acquired data is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a photolithographic pattern for modeling and a measuring method thereof. Background technique [0002] Photolithography is the main process of integrated circuit manufacturing. The task of photolithography process is to realize the transfer of the pattern on the mask plate to the photoresist layer on the silicon wafer. The projected light propagates to the silicon wafer after passing through the mask pattern, and the mask pattern is equivalent to an obstacle on the propagation path for the light wave, so that a lithography pattern related to the mask pattern is obtained on the silicon wafer. According to the principle of diffraction and interference of light waves, light waves will diffract when passing through the mask, and light waves at different positions of the mask will also interfere. Therefore, the light intensity distribution actually projected onto the silicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F1/44
Inventor 钟政金晓亮
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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